Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
Department of Electrical Engineering and Institute of Electronic Engineering, National Tsing Hua University, Hsinchu, 30071, Taiwan.
Adv Mater. 2018 Mar;30(13):e1706995. doi: 10.1002/adma.201706995. Epub 2018 Feb 12.
Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe transistors. Because no dopant or special gas is used in the E-doping processes of MoTe , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe transistors undoubtedly has provided an approach to create the electronic devices with desired performance.
通过电热掺杂（E-掺杂）工艺，实现了二碲化钼（MoTe ）晶体管的精确可控和可逆 p/n 型电子掺杂。E-掺杂包括在真空中由电场引起的电热退火，这导致电子（n 型）掺杂和暴露于空气中，这导致空穴（p 型）掺杂。掺杂源于氧分子或水蒸气与 MoTe 表面碲缺陷之间的相互作用，并允许对 MoTe 晶体管的 p/n 型电掺杂进行精确控制。由于在 MoTe 的 E-掺杂过程中不使用掺杂剂或特殊气体，因此 E-掺杂是一种简单有效的方法。此外，通过对 MoTe 晶体管的 p/n 型掺杂的精确控制，成功地制造了准互补金属氧化物半导体自适应逻辑电路，如反相器、或非门和与非门。用于获得 MoTe 晶体管的 p/n 型掺杂的这种简单方法 E-掺杂无疑为创建具有所需性能的电子设备提供了一种途径。
