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钴掺杂氧化锌纳米粒子的物理和介电性能优化用于低频器件。

Optimization of physical and dielectric properties of Co-doped ZnO nanoparticles for low-frequency devices.

机构信息

Department of Physics, Islamic International University, Islamabad, Pakistan.

School of Material Science, Beijing Institute of Technology, Beijing, China.

出版信息

PLoS One. 2023 Nov 22;18(11):e0287322. doi: 10.1371/journal.pone.0287322. eCollection 2023.

DOI:10.1371/journal.pone.0287322
PMID:37992124
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10664877/
Abstract

In this study, zinc-oxide (ZnO) nanoparticles (NPs) doped with cobalt (Co) were synthesized using a simple coprecipitation technique. The concentration of Co was varied to investigate its effect on the structural, morphological, optical, and dielectric properties of the NPs. X-ray diffraction (XRD) analysis confirmed the hexagonal wurtzite structure of both undoped and Co-doped ZnO-NPs. Scanning electron microscopy (SEM) was used to examine the morphology of the synthesized NPs, while energy-dispersive X-ray spectroscopy (EDX) was used to verify their purity. The band gap of the NPs was evaluated using UV-visible spectroscopy, which revealed a decrease in the energy gap as the concentration of Co2+ increased in the ZnO matrix. The dielectric constants and AC conductivity of the NPs were measured using an LCR meter. The dielectric constant of the Co-doped ZnO-NPs continuously increased from 4.0 × 10-9 to 2.25 × 10-8, while the dielectric loss decreased from 4.0 × 10-8 to 1.7 × 10-7 as the Co content increased from 0.01 to 0.07%. The a.c. conductivity also increased with increasing applied frequency. The findings suggest that the synthesized Co-doped ZnO-NPs possess enhanced dielectric properties and reduced energy gap, making them promising candidates for low-frequency devices such as UV photodetectors, optoelectronics, and spintronics applications. The use of a cost-effective and scalable synthesis method, coupled with detailed material characterization, makes this work significant in the field of nanomaterials and device engineering.

摘要

在这项研究中,使用简单的共沉淀技术合成了掺钴氧化锌(ZnO)纳米粒子(NPs)。改变钴的浓度以研究其对 NPs 的结构、形态、光学和介电性能的影响。X 射线衍射(XRD)分析证实了未掺杂和掺钴 ZnO-NPs 的六方纤锌矿结构。扫描电子显微镜(SEM)用于检查合成 NPs 的形态,而能量色散 X 射线光谱(EDX)用于验证其纯度。使用紫外可见光谱评估 NPs 的带隙,结果表明随着 ZnO 基质中 Co2+浓度的增加,能隙减小。使用 LCR 仪表测量 NPs 的介电常数和交流电导率。Co 掺杂 ZnO-NPs 的介电常数从 4.0×10-9连续增加到 2.25×10-8,而介电损耗从 4.0×10-8减少到 1.7×10-7,随着 Co 含量从 0.01 增加到 0.07%。交流电导率也随施加频率的增加而增加。研究结果表明,合成的 Co 掺杂 ZnO-NPs 具有增强的介电性能和减小的能隙,使其成为低频器件(如 UV 光探测器、光电和自旋电子学应用)的有前途的候选材料。使用具有成本效益和可扩展的合成方法,结合详细的材料表征,使得这项工作在纳米材料和器件工程领域具有重要意义。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/99e1/10664877/9000820ea047/pone.0287322.g009.jpg
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