Khalid Awais, Ahmad Pervaiz, Muhammad Saleh, Khan Abdulhameed, Khandaker Mayeen Uddin, Alam Md Mottahir, Asim Mohd, Din Israf Ud, Iqbal Jibran, Rehman Ibad Ur, Razzaq Zohaib, Pandian Sivakumar, Sharma Rohit, Emran Talha Bin, Sayyed M I, Aldawood Saad, Sulieman Abdelmoneim
Department of Physics, Hazara University Mansehra, Mansehra, Pakistan.
Department of Physics, University of Azad Jammu and Kashmir, Muzaffarabad, Pakistan.
Front Chem. 2022 Jul 12;10:930620. doi: 10.3389/fchem.2022.930620. eCollection 2022.
The use of (gooseberry) leaf extract to synthesize Boron-doped zinc oxide nanosheets (B-doped ZnO-NSs) is deliberated in this article. Scanning electron microscopy (SEM) shows a network of synthesized nanosheets randomly aligned side by side in a B-doped ZnO (15 wt% B) sample. The thickness of B-doped ZnO-NSs is in the range of 20-80 nm. B-doped ZnO-NSs were tested against both gram-positive and gram-negative bacterial strains including and . Against gram-negative bacterium ( and ), B-doped ZnO displays enhanced antibacterial activity with 26 and 24 mm of inhibition zone, respectively. The mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), mean free path (MFP), half-value layer (HVL), and tenth value layer (TVL) of B-doped ZnO were investigated as aspects linked to radiation shielding. These observations were carried out by using a PTW electron detector and VARIAN irradiation with 6 MeV electrons. The results of these experiments can be used to learn more about the radiation shielding properties of B-doped ZnO nanostructures.
本文探讨了使用(醋栗)叶提取物合成硼掺杂氧化锌纳米片(B掺杂ZnO-NSs)。扫描电子显微镜(SEM)显示,在B掺杂ZnO(15 wt% B)样品中,合成的纳米片网络随机并排排列。B掺杂ZnO-NSs的厚度在20-80纳米范围内。对B掺杂ZnO-NSs针对革兰氏阳性和革兰氏阴性细菌菌株进行了测试,包括 和 。针对革兰氏阴性细菌( 和 ),B掺杂ZnO分别显示出增强的抗菌活性,抑菌圈为26毫米和24毫米。研究了B掺杂ZnO的质量衰减系数(MAC)、线性衰减系数(LAC)、平均自由程(MFP)、半值层(HVL)和十分之一值层(TVL)等与辐射屏蔽相关的方面。这些观察是通过使用PTW电子探测器和6 MeV电子的瓦里安辐照进行的。这些实验结果可用于更深入了解B掺杂ZnO纳米结构的辐射屏蔽特性。