背面纹理化p型高温钝化接触及其在钙钛矿/硅串联电池中的应用
Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells.
作者信息
Walter Arnaud, Kamino Brett A, Moon Soo-Jin, Wyss Patrick, Diaz Leon Juan J, Allebé Christophe, Descoeudres Antoine, Nicolay Sylvain, Ballif Christophe, Jeangros Quentin, Ingenito Andrea
机构信息
CSEM SA, Sustainable Energy Jaquet-Droz 1 2002 Neuchâtel Switzerland
Institute of Electrical and Microengineering (IEM), Photovoltaics and Thin-Film Electronics Laboratory (PV-Lab), Ecole Polytechnique Fédérale de Lausanne (EPFL) Rue de la Maladière 71b 2002 Neuchâtel Switzerland.
出版信息
Energy Adv. 2023 Sep 26;2(11):1818-1822. doi: 10.1039/d3ya00048f. eCollection 2023 Nov 9.
Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silicon electron contact, high-voltage silicon bottom cells could be demonstrated and included in 28.25%-efficient perovskite/Si tandems. The active area was 4 cm active area and the front electrode was screen-printed.
基于高温钝化接触的硅太阳能电池正成为光伏行业的主流。在此，我们开发了一种高质量的硼掺杂多晶硅空穴接触。当与共处理的磷掺杂多晶硅电子接触相结合时，可以展示出高压硅底电池，并将其纳入效率为28.25%的钙钛矿/硅叠层电池中。有源区面积为4平方厘米，正面电极采用丝网印刷。
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