Wang Shuo, Gao Chengwei, Xu Tiefeng, Dai Shixun, Lin Changgui, Tan Linling
Opt Express. 2023 Oct 23;31(22):36245-36254. doi: 10.1364/OE.501541.
Rare-earth doped chalcogenide films are major components in flexible and integrated photonic and optoelectronic devices for modern communication systems, metrology, and optical sensing. However, it is still challenging to develop a high concentration of rare-earth doping chalcogenide film with a smooth surface to realize efficient photoluminescence (PL). Here, we demonstrate that Er-doped GeS films are prepared by spin-coating based on a two-step dissolution process. Such a two-step process provides the high solubility of Er in GeS films and exhibits efficient emission at ∼1.5 µm crossing the telecommunication C-band. The highest PL emission intensity is obtained in GeS films doped with 1.4 mol% of Er, and this PL in GeS films is reported for the first time. We propose adjustments of annealing parameters for improving the PL characteristics in such materials. Through the control precision of the heating rate and annealing temperature, the smooth surface of GeS films enables efficient photo-luminescence. This two-step dissolution-based strategy would pave a new path to design luminescent chalcogenide films for application in flexible and integrated optoelectronics and photonics.
稀土掺杂硫族化物薄膜是现代通信系统、计量学和光学传感领域中柔性和集成光子及光电器件的主要组成部分。然而，开发一种具有光滑表面的高浓度稀土掺杂硫族化物薄膜以实现高效光致发光（PL）仍然具有挑战性。在此，我们展示了基于两步溶解过程通过旋涂法制备掺铒的GeS薄膜。这种两步法使铒在GeS薄膜中具有高溶解度，并在跨越电信C波段的~1.5 µm处表现出高效发射。在掺杂1.4 mol%铒的GeS薄膜中获得了最高的PL发射强度，并且这种GeS薄膜中的PL首次被报道。我们提出调整退火参数以改善此类材料的PL特性。通过控制加热速率和退火温度的精度，GeS薄膜的光滑表面能够实现高效光致发光。这种基于两步溶解的策略将为设计用于柔性和集成光电子学及光子学的发光硫族化物薄膜开辟一条新途径。
