High-sensitivity self-powered photodetector based on an in-situ prepared CsPbBr microwire/InGaN heterojunction.

Low-dimensional CsPbBr perovskite materials have gained widespread attention, derived from their remarkable properties and potential for numerous optoelectronic applications. Herein, the sample of CsPbBr microwires were prepared horizontally onto n-type InGaN film substrate using an in-plane solution growth method. The resulting CsPbBr microwire/InGaN heterojunction allows for the achievement of a highly sensitive and broadband photodetector. Particularly for the implementation in a self-supplying manner, the best-performing photodetector can achieve a superior On/Off ratio of 4.6×10, the largest responsivity ∼ 800.0 mA/W, a maximum detectivity surpassing 4.6× 10 Jones, and a high external quantum efficiency approaching 86.5% upon 405 nm light illumination. A rapid response time (∼ 4.48 ms/7.68 ms) was also achieved. The as-designed CsPbBr microwire/InGaN heterojunction device without any encapsulation exhibits superior comprehensive stability. Besides, the device featuring as a single pixel imaging unit can readily detect simple images under broadband light illumination with a high spatial resolution, acknowledging its outstanding imaging capability. The robust photodetection properties could be derived from the intense absorption of CsPbBr MWs and high-efficiency charge carriers transporting toward the in-situ formed CsPbBr/InGaN heterointerface. The results may offer an available strategy for the in-situ construction of best-performing low-dimensional perovskite heterojunction optoelectronic devices.