Lee Hyo Cheol, Bootharaju Megalamane S, Lee Kyunghoon, Chang Hogeun, Kim Seo Young, Ahn Eonhyoung, Li Shi, Kim Byung Hyo, Ahn Hyungju, Hyeon Taeghwan, Yang Jiwoong
Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.
Adv Sci (Weinh). 2024 Feb;11(6):e2307600. doi: 10.1002/advs.202307600. Epub 2023 Dec 10.
Understanding the mechanism underlying the formation of quantum-sized semiconductor nanocrystals is crucial for controlling their synthesis for a wide array of applications. However, most studies of 2D CdSe nanocrystals have relied predominantly on ex situ analyses, obscuring key intermediate stages and raising fundamental questions regarding their lateral shapes. Herein, the formation pathways of two distinct quantum-sized 2D wurtzite-CdSe nanocrystals - nanoribbons and nanosheets - by employing a comprehensive approach, combining in situ small-angle X-ray scattering techniques with various ex situ characterization methods is studied. Although both nanostructures share the same thickness of ≈1.4 nm, they display contrasting lateral dimensions. The findings reveal the pivotal role of Se precursor reactivity in determining two distinct synthesis pathways. Specifically, highly reactive precursors promote the formation of the nanocluster-lamellar assemblies, leading to the synthesis of 2D nanoribbons with elongated shapes. In contrast, mild precursors produce nanosheets from a tiny seed of 2D nuclei, and the lateral growth is regulated by chloride ions, rather than relying on nanocluster-lamellar assemblies or Cd(halide) -alkylamine templates, resulting in 2D nanocrystals with relatively shorter lengths. These findings significantly advance the understanding of the growth mechanism governing quantum-sized 2D semiconductor nanocrystals and offer valuable guidelines for their rational synthesis.
了解量子尺寸半导体纳米晶体形成的潜在机制对于控制其合成以用于广泛的应用至关重要。然而,大多数关于二维CdSe纳米晶体的研究主要依赖于非原位分析,这掩盖了关键的中间阶段,并引发了关于其横向形状的基本问题。在此,通过采用一种综合方法,即将原位小角X射线散射技术与各种非原位表征方法相结合,研究了两种不同的量子尺寸二维纤锌矿型CdSe纳米晶体——纳米带和纳米片的形成途径。尽管这两种纳米结构的厚度均约为1.4纳米,但它们的横向尺寸却截然不同。研究结果揭示了硒前驱体反应性在决定两种不同合成途径中的关键作用。具体而言,高反应性前驱体促进纳米团簇-层状组装体的形成,从而导致合成出形状细长的二维纳米带。相比之下,温和的前驱体从二维核的微小晶种生成纳米片,并且横向生长由氯离子调节,而不是依赖于纳米团簇-层状组装体或Cd(卤化物)-烷基胺模板,从而产生长度相对较短的二维纳米晶体。这些发现显著推进了对量子尺寸二维半导体纳米晶体生长机制的理解,并为其合理合成提供了有价值的指导。