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由魔法尺寸团簇介导的II-VI族半导体纳米晶体的成核控制掺杂

Nucleation-Controlled Doping of II-VI Semiconductor Nanocrystals Mediated by Magic-Sized Clusters.

作者信息

Ji Seunghyun, Abbas Hafiz Ghulam, Kim Seo Young, Lee Hyo Cheol, Lee Kyunghoon, Li Shi, Choe Seungho, Ahn Hyungju, Ringe Stefan, Yang Jiwoong

机构信息

Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu 42988 Republic of Korea.

Department of Chemistry Korea University Seoul 02841 Republic of Korea.

出版信息

Small Sci. 2024 Nov 15;5(1):2400300. doi: 10.1002/smsc.202400300. eCollection 2025 Jan.

DOI:10.1002/smsc.202400300
PMID:40212658
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11935185/
Abstract

Doping quantum-confined semiconductor nanocrystals offers an effective way to tailor their unique properties. However, the inherent challenges of nanoscale doping processes, such as the low probability of successful doping, have hindered their practical applications. Nucleation-controlled doping has emerged as a potential solution, but a comprehensive mechanistic understanding of this process is lacking. Herein, the nucleation-controlled doping process facilitated by magic-sized cluster intermediates is elucidated. This approach enables the synthesis of 2D ZnSe quantum nanoribbons with two distinct doping sites. Remarkably, the identity of the dopants plays a critical role in determining the chemical pathways of nucleation-controlled doping. Substitutional doping of magic-sized clusters with Mn ions leads to successful substitutional doping of the final 2D nanocrystals. Conversely, Co ions, initially occupying substitutional positions in the magic-sized cluster intermediates, relocate to alternative sites, such as interstitial sites, in the final nanocrystals. First-principle calculations of dopant formation energies support these experimental findings, demonstrating the thermodynamic favorability of specific dopant site preferences. Moreover, a consistent tendency is observed in CdSe nanocrystals, suggesting that the proposed doping mechanism is generally applicable to II-VI semiconductors. This study will advance the controlled synthesis of various doped semiconductor nanocrystals using nucleation-controlled doping processes.

摘要

掺杂量子限域半导体纳米晶体为调控其独特性质提供了一种有效方法。然而,纳米级掺杂过程存在一些固有挑战,比如成功掺杂的概率较低,这阻碍了它们的实际应用。成核控制掺杂已成为一种潜在的解决方案,但目前缺乏对这一过程全面的机理理解。在此,阐明了由魔法尺寸团簇中间体促进的成核控制掺杂过程。这种方法能够合成具有两个不同掺杂位点的二维ZnSe量子纳米带。值得注意的是,掺杂剂的种类在决定成核控制掺杂的化学路径方面起着关键作用。用Mn离子对魔法尺寸团簇进行替代掺杂会导致最终二维纳米晶体的成功替代掺杂。相反,最初占据魔法尺寸团簇中间体替代位置的Co离子会迁移到最终纳米晶体中的其他位置,如间隙位置。掺杂剂形成能的第一性原理计算支持了这些实验结果,证明了特定掺杂剂位点偏好的热力学有利性。此外,在CdSe纳米晶体中也观察到了一致的趋势,这表明所提出的掺杂机制通常适用于II-VI族半导体。这项研究将推动利用成核控制掺杂过程对各种掺杂半导体纳米晶体进行可控合成。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/07f1/11935185/cd30f5c05ba8/SMSC-5-2400300-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/07f1/11935185/b05bf51fc7bd/SMSC-5-2400300-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/07f1/11935185/4129c73e29c2/SMSC-5-2400300-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/07f1/11935185/dc8f05183a08/SMSC-5-2400300-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/07f1/11935185/9ecc4fbe1c9d/SMSC-5-2400300-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/07f1/11935185/cd30f5c05ba8/SMSC-5-2400300-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/07f1/11935185/b05bf51fc7bd/SMSC-5-2400300-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/07f1/11935185/4129c73e29c2/SMSC-5-2400300-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/07f1/11935185/dc8f05183a08/SMSC-5-2400300-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/07f1/11935185/9ecc4fbe1c9d/SMSC-5-2400300-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/07f1/11935185/cd30f5c05ba8/SMSC-5-2400300-g001.jpg

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