Ling Yongfa, Li Jiexin, Luo Tao, Lin Ying, Zhang Guangxin, Shou Meihua, Liao Qing
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
School of Mechanical and Electronic Engineering, Hezhou University, Hezhou 542899, China.
Nanomaterials (Basel). 2023 Dec 11;13(24):3117. doi: 10.3390/nano13243117.
Memristors are recognized as crucial devices for future nonvolatile memory and artificial intelligence. Due to their typical neuron-synapse-like metal-insulator-metal(MIM) sandwich structure, they are widely used to simulate biological synapses and have great potential in advancing biological synapse simulation. However, the high switch voltage and inferior stability of the memristor restrict the broader application to the emulation of the biological synapse. In this study, we report a vertically structured memristor based on few-layer MoS2. The device shows a lower switching voltage below 0.6 V, with a high ON/OFF current ratio of 104, good stability of more than 180 cycles, and a long retention time exceeding 3 × 103 s. In addition, the device has successfully simulated various biological synaptic functions, including potential/depression propagation, paired-pulse facilitation (PPF), and long-term potentiation/long-term depression (LTP/LTD) modulation. These results have significant implications for the design of a two-dimensional transition-metal dichalcogenides composite material memristor that aim to mimic biological synapses, representing promising avenues for the development of advanced neuromorphic computing systems.
忆阻器被认为是未来非易失性存储器和人工智能的关键器件。由于其典型的类似神经元突触的金属-绝缘体-金属（MIM）三明治结构，它们被广泛用于模拟生物突触，在推进生物突触模拟方面具有巨大潜力。然而，忆阻器的高开关电压和较差的稳定性限制了其在生物突触仿真中的更广泛应用。在本研究中，我们报道了一种基于几层MoS2的垂直结构忆阻器。该器件显示出低于0.6 V的较低开关电压，开/关电流比高达104，超过180个周期的良好稳定性，以及超过3×103 s的长保持时间。此外，该器件已成功模拟了各种生物突触功能，包括电位/抑制传播、双脉冲易化（PPF）以及长时程增强/长时程抑制（LTP/LTD）调制。这些结果对于旨在模仿生物突触的二维过渡金属二硫属化物复合材料忆阻器的设计具有重要意义，为先进神经形态计算系统的发展开辟了有前景的途径。
