Chen Zhaoxi, Zong Yue, Chai Yue, E Mengzheng, He Yulu, Shi Shucheng, Cai Jun, Zhang Qing, Li Jun, Chen Jinfang, Liu Xuerong, Wang Zhu-Jun, Wang Dong, Liu Zhi
Center for Transformative Science (CTS), ShanghaiTech University, No. 393 Huaxia Rd, Shanghai, 201210, China.
Shanghai Advanced Research Institute (SARI), Chinese Academy of Sciences (CAS), No. 99 Haike Rd, Shanghai, 201210, China.
Small Methods. 2024 Aug;8(8):e2301319. doi: 10.1002/smtd.202301319. Epub 2024 Jan 4.
The nitrogen doping (N-doping) treatment for niobium superconducting radio-frequency (SRF) cavities is one of the key enabling technologies that support the development of more efficient future large accelerators. However, the N-doping results have diverged due to a complex chemical profile under the nitrogen-doped surface. Particularly, under industrial-scale production conditions, it is difficult to understand the underlying mechanism thus hindering performance improvement. Herein, a combination of spatially resolved and surface-sensitive approaches is employed to establish the detailed near-surface phase composition of thermally processed niobium. The results show that intermediate phase segregations, particularly the nanometric carbon-rich phase, can impede the nitridation process and limit the interactions between nitrogen and the niobium sub-surface. In comparison, the removal of the carbon-rich layer at the Nb surface leads to enhanced nitrogen binding at the Nb surface. Combining the RF test results, it is shown that the complex uniformity and grain boundary penetrations of impurity elements have a direct correlation with the mid-field quench behavior in the N-doped Nb cavities. Therefore, proper control of the nanometric intermediate phase formation in discrete thermal steps is critical in improving the ultimate performance and production yield of the Nb cavities.
铌超导射频(SRF)腔的氮掺杂(N掺杂)处理是支持未来更高效大型加速器发展的关键 enabling 技术之一。然而,由于氮掺杂表面下复杂的化学分布,N掺杂结果存在差异。特别是在工业规模生产条件下,难以理解其潜在机制,从而阻碍了性能提升。在此,采用空间分辨和表面敏感方法相结合的方式来确定热处理铌的详细近表面相组成。结果表明,中间相偏析,特别是纳米级富碳相,会阻碍氮化过程并限制氮与铌次表面之间的相互作用。相比之下,去除铌表面的富碳层会增强氮在铌表面的结合。结合射频测试结果表明,杂质元素复杂的均匀性和晶界渗透与N掺杂铌腔中的中场失超行为直接相关。因此,在离散热步骤中适当控制纳米级中间相的形成对于提高铌腔的最终性能和生产良率至关重要。