Monzón González César Raúl, Sánchez Vergara María Elena, Elías-Espinosa Milton Carlos, Rodríguez-Valencia Sergio Arturo, López-Mayorga Byron José, Castillo-Arroyave José León, Toscano Rubén Alfredo, Flores Octavio Lozada, Álvarez Toledano Cecilio
Instituto de Química, Universidad Nacional Autónoma de México, Circuito Exterior s/n. C.U., Delegación Coyoacán, C.P., 04510, Ciudad de México, México.
Facultad de Ingeniería, Universidad Anáhuac México, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Huixquilucan, Estado de México, 52786, México.
ChemistryOpen. 2024 Jun;13(6):e202300219. doi: 10.1002/open.202300219. Epub 2024 Jan 5.
In this work, it is proposed the development of organic semiconductors (OS) based on uranyl(VI) complexes. The above by means of the synthesis and the characterization of the complexes by Infrared spectroscopy, Nuclear magnetic resonance spectroscopy, mass spectrometry, and X-ray diffraction. Films of these complexes were deposited and subsequently, topographic and structural characterization was carried out by Scanning Electron Microscopy, X-ray diffraction, and Atomic Force Microscopy. Additionally, the nanomechanical evaluation was performed to know the stiffness of uranyl films using their modulus of elasticity. Also, the optical characterization took place in the devices and their bandgap value ranges between 2.40 and 2.93 eV being the minor for the film of the uranyl complex with the N on pyridine in position 4 (2 c). Finally, the electrical behavior of the uranyl(VI) films was evaluated, and important differences were obtained: the uranyl complex with the N on pyridine in position 2 (2 a) film is not influenced by changes in lighting and its current density is in the order of 10 A/cm. The film with uranyl complex with the N on pyridine in position 3 (2 b) and 2 c presents a greater current flow under lighting conditions and two orders of magnitude larger than in film 2 a. In these films 2 b and 2 c, ohmic behavior occurs at low voltages, while at high voltages the charge transport changes to space-charge limited current behavior.
在这项工作中,提出了基于铀酰(VI)配合物开发有机半导体(OS)。上述工作通过配合物的合成以及利用红外光谱、核磁共振光谱、质谱和X射线衍射对其进行表征来完成。沉积了这些配合物的薄膜,随后通过扫描电子显微镜、X射线衍射和原子力显微镜进行形貌和结构表征。此外,进行了纳米力学评估以使用铀酰薄膜的弹性模量了解其刚度。而且,对器件进行了光学表征,其带隙值在2.40至2.93 eV之间,对于吡啶4位带有N的铀酰配合物薄膜(2c)而言最小。最后,评估了铀酰(VI)薄膜的电学行为,获得了重要差异:吡啶2位带有N的铀酰配合物薄膜(2a)不受光照变化的影响,其电流密度约为10 A/cm。吡啶3位(2b)和2c位带有N的铀酰配合物薄膜在光照条件下呈现出更大的电流,比薄膜2a大两个数量级。在这些薄膜2b和2c中,在低电压下呈现欧姆行为,而在高电压下电荷传输转变为空间电荷限制电流行为。