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采用有机半导体薄膜制造的柔性光电导体分析。

Analysis of a Flexible Photoconductor, Manufactured with Organic Semiconductor Films.

作者信息

Cantera Cantera Luis Alberto, Sánchez Vergara María Elena, Hamui Leon, Mejía Prado Isidro, Flores Huerta Alejandro, Martínez Plata Teresa Lizet

机构信息

Faculty of Engineering, Universidad Anáhuac México, Av. Universidad Anáhuac 46, Col. Lomas Anáhuac, Huixquilucan 52786, Mexico.

Instituto Politécnico Nacional-ESIME, Unidad Profesional Adolfo López Mateos, Av. Luis Enrique Erro S/N, Gustavo A. Madero, Zacatenco 07738, Mexico.

出版信息

Micromachines (Basel). 2024 Mar 27;15(4):446. doi: 10.3390/mi15040446.

Abstract

This work presents the evaluation of the electrical behavior of a flexible photoconductor with a planar heterojunction architecture made up of organic semiconductor films deposited by high vacuum evaporation. The heterojunction was characterized in its morphology and mechanical properties by scanning electron microscopy and atomic force microscopy. The electrical characterization was carried out through the approximations of ohmic and SCLC (Space-Charge Limited Current) behaviors using experimental J-V (current density-voltage) curves at different voltages and under different light conditions. The optimization of the photoconductor was carried out through annealing and accelerated lighting processes. With these treatments, the Knoop Hardness of the flexible photoconductor has reached a value of 8 with a tensile strength of 5.7 MPa. The ohmic and SCLC approximations demonstrate that the unannealed device has an ohmic behavior, whereas the annealed device has an SCLC behavior, and after the optimization process, an ohmic behavior and a maximum current density of 0.34 mA/mm were obtained under blue light. The approximations of the device's electron mobility (μn) and free carrier density (n0) were performed under different light conditions, and the electrical activation energy and electrical gap were obtained for the flexible organic device, resulting in appropriate properties for these applications.

摘要

本文介绍了一种具有平面异质结结构的柔性光电导体电学行为的评估,该异质结由通过高真空蒸发沉积的有机半导体薄膜组成。通过扫描电子显微镜和原子力显微镜对异质结的形貌和机械性能进行了表征。电学表征是通过使用不同电压和不同光照条件下的实验J-V(电流密度-电压)曲线,对欧姆行为和SCLC(空间电荷限制电流)行为进行近似来进行的。通过退火和加速光照过程对光电导体进行了优化。经过这些处理,柔性光电导体的努氏硬度达到了8,拉伸强度为5.7MPa。欧姆和SCLC近似表明,未退火的器件具有欧姆行为,而退火后的器件具有SCLC行为,并且在优化过程之后,在蓝光下获得了欧姆行为和0.34mA/mm的最大电流密度。在不同光照条件下对器件的电子迁移率(μn)和自由载流子密度(n0)进行了近似,并获得了柔性有机器件的电激活能和电隙,从而为这些应用提供了合适的性能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5500/11052026/6d0eddac4de0/micromachines-15-00446-g001.jpg

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