(InSe)NbSe 中 InSe 键合层相互作用导致的超导性增强及临界电流密度增加
Enhanced Superconductivity and Critical Current Density Due to the Interaction of InSe Bonded Layer in (InSe)NbSe.
作者信息
Niu Rui, Li Jiayang, Zhen Weili, Xu Feng, Weng Shirui, Yue Zhilai, Meng Xiangmin, Xia Jing, Hao Ning, Zhang Changjin
机构信息
High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences, Hefei 230031, China.
Science Island Branch of Graduate School, University of Science and Technology of China, Hefei 230026, China.
出版信息
J Am Chem Soc. 2024 Jan 17;146(2):1244-1249. doi: 10.1021/jacs.3c09756. Epub 2024 Jan 5.
Superconductivity was discovered in (InSe)NbSe. The materials are crystallized in a unique layered structure where bonded InSe layers are intercalated into the van der Waals gaps of 2H-phase NbSe. The (InSe)NbSe superconductor exhibits a superconducting transition at 11.6 K and critical current density of 8.2 × 10 A/cm. Both values are the highest among all transition metal dichalcogenide superconductors at ambient pressure. The present finding provides an ideal material platform for further investigation of superconducting-related phenomena in transition metal dichalcogenides.
在(InSe)NbSe中发现了超导性。这些材料以独特的层状结构结晶，其中键合的InSe层插入到2H相NbSe的范德华间隙中。(InSe)NbSe超导体在11.6 K时表现出超导转变，临界电流密度为8.2×10 A/cm。在环境压力下，这两个值在所有过渡金属二硫属化物超导体中都是最高的。这一发现为进一步研究过渡金属二硫属化物中与超导相关的现象提供了一个理想的材料平台。
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