Josline Mukkath Joseph, Ghods Soheil, Kosame Saikiran, Choi Jun-Hui, Kim Woongchan, Kim Sein, Chang SooHyun, Hyun Sang Hwa, Kim Seung-Il, Moon Ji-Yun, Park Hyeong Gi, Cho Sung Beom, Ju Heongkyu, Lee Jae-Hyun
Department of Materials Science and Engineering, Ajou University, Suwon, 16499, South Korea.
Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea.
Small. 2024 Jun;20(25):e2307276. doi: 10.1002/smll.202307276. Epub 2024 Jan 9.
Graphdiyne (GDY) has garnered significant attention as a cutting-edge 2D material owing to its distinctive electronic, optoelectronic, and mechanical properties, including high mobility, direct bandgap, and remarkable flexibility. One of the key challenges hindering the implementation of this material in flexible applications is its large area and uniform synthesis. The facile growth of centimeter-scale bilayer hydrogen substituted graphdiyne (Bi-HsGDY) on germanium (Ge) substrate is achieved using a low-temperature chemical vapor deposition (CVD) method. This material's field effect transistors (FET) showcase a high carrier mobility of 52.6 cm V s and an exceptionally low contact resistance of 10 Ω µm. By transferring the as-grown Bi-HsGDY onto a flexible substrate, a long-distance piezoresistive strain sensor is demonstrated, which exhibits a remarkable gauge factor of 43.34 with a fast response time of ≈275 ms. As a proof of concept, communication by means of Morse code is implemented using a Bi-HsGDY strain sensor. It is believed that these results are anticipated to open new horizons in realizing Bi-HsGDY for innovative flexible device applications.
石墨炔（GDY）作为一种前沿的二维材料，因其独特的电子、光电和机械性能，包括高迁移率、直接带隙和出色的柔韧性而备受关注。阻碍这种材料在柔性应用中实现的关键挑战之一是其大面积且均匀的合成。采用低温化学气相沉积（CVD）方法，在锗（Ge）衬底上实现了厘米级双层氢取代石墨炔（Bi-HsGDY）的简便生长。这种材料的场效应晶体管（FET）表现出52.6 cm² V⁻¹ s⁻¹的高载流子迁移率和10 Ω µm的极低接触电阻。通过将生长好的Bi-HsGDY转移到柔性衬底上，展示了一种长距离压阻应变传感器，其具有43.34的显著应变系数和约275 ms的快速响应时间。作为概念验证，使用Bi-HsGDY应变传感器实现了通过摩尔斯电码进行通信。相信这些结果有望为实现用于创新柔性器件应用的Bi-HsGDY开辟新的前景。
