Impact of Ce doping on the optoelectronic and structural properties of a CsPbIBr perovskite solar cell.

This paper provides a detailed analysis of pure CsPbIBr and 4% Ce-doped CsPbIBr perovskite films, emphasizing their structural, optical and photovoltaic properties. X-ray diffraction confirms a predominant cubic perovskite phase in both samples, with Ce doping leading to the increased crystal size (21 nm to 32 nm). UV-vis spectroscopy reveals a reduced bandgap energy (2.2 eV to 2.1 eV) with Ce doping. Dielectric constant analysis indicates the enhanced permittivity of the Ce-doped sample, crucial for solar-cell light trapping. Energy band structure analysis demonstrates improved photovoltaic cell performance with Ce doping, yielding higher open-circuit voltage, short-circuit current, and efficiency (9.71%) compared to pure CsPbIBr (8.02%). Ce doping mitigates electron-hole recombination, enhancing cell stability, electron affinity, and power output. This research underscores the potential of cost-effective, efficient, and stable CsPbIBr perovskite solar cells.