Wang Zhongxu, Nan Jiao, Tian Zhiwen, Liu Pei, Wu Yinhe, Zhang Jincheng
Key Laboratory for Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
China Astronautics Standards Institute, Beijing 100071, China.
Micromachines (Basel). 2023 Dec 30;15(1):80. doi: 10.3390/mi15010080.
As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance. PGaN gate HEMTs are promising candidates for high-voltage, high-power applications due to the normally off operation and robust gate reliability. However, the threshold and gate-breakdown voltages are relatively low compared with Si-based and SiC-based power MOSFETs. The epitaxial layers and device structures were optimized to enhance the main characteristics of pGaN HEMTs. In this work, various methods to improve threshold and gate-breakdown voltages are presented, such as the top-layer optimization of the pGaN cap, hole-concentration enhancement, the low-work-function gate electrode, and the MIS-type pGaN gate. The discussion of the main gate characteristic enhancement of p-type GaN gate HEMTs would accelerate the development of GaN power electronics to some extent.
作为宽带隙半导体，氮化镓（GaN）横向高电子迁移率晶体管（HEMT）具有高击穿电压、低电阻和高频性能。由于其常关操作和稳健的栅极可靠性，p型氮化镓栅极HEMT是高压、高功率应用的有前途的候选者。然而，与基于硅和基于碳化硅的功率MOSFET相比，其阈值电压和栅极击穿电压相对较低。通过优化外延层和器件结构来增强p型氮化镓HEMT的主要特性。在这项工作中，提出了各种提高阈值电压和栅极击穿电压的方法，例如p型氮化镓帽层的顶层优化、空穴浓度增强、低功函数栅电极和MIS型p型氮化镓栅极。对p型氮化镓栅极HEMT主要栅极特性增强的讨论将在一定程度上加速氮化镓功率电子学的发展。
