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超四方相SrAlO作为用于高完整性独立氧化物膜的牺牲层。

Super-tetragonal SrAlO as a sacrificial layer for high-integrity freestanding oxide membranes.

作者信息

Zhang Jinfeng, Lin Ting, Wang Ao, Wang Xiaochao, He Qingyu, Ye Huan, Lu Jingdi, Wang Qing, Liang Zhengguo, Jin Feng, Chen Shengru, Fan Minghui, Guo Er-Jia, Zhang Qinghua, Gu Lin, Luo Zhenlin, Si Liang, Wu Wenbin, Wang Lingfei

机构信息

Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China.

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

出版信息

Science. 2024 Jan 26;383(6681):388-394. doi: 10.1126/science.adi6620. Epub 2024 Jan 25.

DOI:10.1126/science.adi6620
PMID:38271502
Abstract

Identifying a suitable water-soluble sacrificial layer is crucial to fabricating large-scale freestanding oxide membranes, which offer attractive functionalities and integrations with advanced semiconductor technologies. Here, we introduce a water-soluble sacrificial layer, "super-tetragonal" SrAlO (SAO). The low-symmetric crystal structure enables a superior capability to sustain epitaxial strain, allowing for broad tunability in lattice constants. The resultant structural coherency and defect-free interface in perovskite ABO/SAO heterostructures effectively restrain crack formation during the water release of freestanding oxide membranes. For a variety of nonferroelectric oxide membranes, the crack-free areas can span up to a millimeter in scale. This compelling feature, combined with the inherent high water solubility, makes SAO a versatile and feasible sacrificial layer for producing high-quality freestanding oxide membranes, thereby boosting their potential for innovative device applications.

摘要

识别合适的水溶性牺牲层对于制造大规模独立氧化物膜至关重要,这种膜具有吸引人的功能并能与先进半导体技术集成。在此,我们引入一种水溶性牺牲层,即“超四方”SrAlO(SAO)。低对称晶体结构使其具有卓越的承受外延应变的能力,从而在晶格常数方面具有广泛的可调性。在钙钛矿ABO/SAO异质结构中产生的结构相干性和无缺陷界面有效地抑制了独立氧化物膜在水释放过程中的裂纹形成。对于各种非铁电氧化物膜,无裂纹区域的尺寸可达一毫米。这一引人注目的特性,再加上其固有的高水溶性,使SAO成为用于生产高质量独立氧化物膜的通用且可行的牺牲层,从而提升了它们在创新器件应用中的潜力。

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