Shein-Lumbroso Ofir, Gerry Matthew, Shastry Abhay, Vilan Ayelet, Segal Dvira, Tal Oren
Department of Chemical and Biological Physics, Weizmann Institute of Science, Rehovot 7610001, Israel.
Department of Physics, University of Toronto, 60 Saint George Street, Toronto, Ontario M5S 1A7, Canada.
Nano Lett. 2024 Feb 14;24(6):1981-1987. doi: 10.1021/acs.nanolett.3c04445. Epub 2024 Jan 30.
Electronic flicker noise is recognized as the most abundant noise in electronic conductors, either as an unwanted contribution or as a source of information on electron transport mechanisms and material properties. This noise is typically observed when a voltage difference is applied across a conductor or current is flowing through it. Here, we identify an unknown type of electronic flicker noise that is found when a temperature difference is applied across a nanoscale conductor in the absence of a net charge current or voltage bias. The revealed delta-T flicker noise is demonstrated in molecular junctions and characterized using quantum transport theory. This noise is expected to arise in nanoscale electronic conductors subjected to unintentional temperature gradients, where it can be a performance-limiting factor. On the positive side, delta-T flicker noise can detect temperature differences across a large variety of nanoscale conductors, down to atomic-scale junctions with no special setup requirements.
电子闪烁噪声被认为是电子导体中最普遍存在的噪声,它既可能是一种有害的干扰,也可能是有关电子传输机制和材料特性的信息来源。这种噪声通常在导体两端施加电压差或有电流通过时被观测到。在此,我们识别出一种未知类型的电子闪烁噪声,它是在纳米级导体两端施加温差且不存在净电荷电流或电压偏置的情况下被发现的。所揭示的ΔT闪烁噪声在分子结中得到了证实,并用量子输运理论进行了表征。预计这种噪声会出现在受到无意温度梯度影响的纳米级电子导体中,在这种情况下它可能是一个限制性能的因素。从积极的方面来看,ΔT闪烁噪声能够检测各种纳米级导体两端的温差,直至原子尺度的结,且无需特殊的设置要求。