Xia Yujie, Peng Lei, Shu Le, Wu Ao, Shao Hezhu, Li Ben, Zhang Juan, Sui Zhan, Zhu Heyuan, Zhang Hao
Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou, Zhejiang 325035, China.
ACS Nano. 2024 Feb 6. doi: 10.1021/acsnano.3c12457.
The electron-phonon interaction (EPI) and phonon-phonon interactions are ubiquitous in promising two-dimensional (2D) semiconductors, determining both electronic and thermal transport properties. In this work, based on calculations, the effects of intervalley scattering on EPI and higher-order four-phonon interactions of α-Te and β-Te are investigated. Through the proposed selection rules for scattering channels and calculations of full electron-phonon scattering rates, we demonstrate that multiple nearly degenerate local valleys/peaks produce more scattering channels, resulting in stronger intervalley scattering over intravalley scattering. The lattice thermal conductivities of α-Te and β-Te are decreased by as much as 10.9% and 30.8% by considering EPI under the carrier concentration of 2 × 10 cm (n-type) at 300 K compared to those limited by three-phonon scattering, respectively. However, when further considering four-phonon scattering, EPI reduces the lattice thermal conductivities by 2.6% and 19.4% for α-Te and β-Te, respectively. Furthermore, it is revealed that the four-phonon interaction is more dominant in phonon transport for α-Te than that for β-Te due to the presence of an acoustic-optical phonon gap in α-Te. Finally, we demonstrate strong intervalley scattering induces significant renormalization effects from EPI on all the constituent parameters of thermoelectric performance. Our results show the contributions of intervalley scattering to the electronic properties as well as thermal transport properties in band-convergent thermoelectric materials are essential and highlight the potential of monolayer tellurium as a promising candidate for advanced thermoelectric applications.
电子 - 声子相互作用(EPI)和声子 - 声子相互作用在有前景的二维(2D)半导体中普遍存在,决定着电子和热输运性质。在这项工作中,基于计算,研究了能谷间散射对α - Te和β - Te的EPI及高阶四声子相互作用的影响。通过提出的散射通道选择规则和全电子 - 声子散射率的计算,我们证明多个近简并的局域能谷/峰值产生更多的散射通道,导致能谷间散射比能谷内散射更强。在300 K下,与受三声子散射限制的情况相比,在载流子浓度为2×10 cm(n型)时考虑EPI,α - Te和β - Te的晶格热导率分别降低了10.9%和30.8%。然而,当进一步考虑四声子散射时,EPI使α - Te和β - Te的晶格热导率分别降低了2.6%和19.4%。此外,由于α - Te中存在声光声子能隙,揭示出四声子相互作用在α - Te的声子输运中比在β - Te中更占主导。最后,我们证明强能谷间散射会引起EPI对热电性能所有组成参数的显著重整化效应。我们的结果表明能谷间散射对带收敛热电材料的电子性质以及热输运性质的贡献至关重要,并突出了单层碲作为先进热电应用有前景候选材料的潜力。