Sun Guanlang, Dong Taige, Luo Aixin, Yang Jiachen, Dong Ying, Du Guangda, Hong Zekai, Qin Chuyu, Fan Bingfeng
School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528225, China.
Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Optoelectronic Technology, Foshan University, Foshan 528225, China.
Nanomaterials (Basel). 2024 Jan 26;14(3):267. doi: 10.3390/nano14030267.
In this study, we have fabricated a 368 nm LED with an epitaxial Indium Tin Oxide (ITO) contact layer. We analyze the thermal performance of the flip-chip LED with a symmetric electrode and metal reflective layer, applying ANSYS to build a coupled electro-thermal finite element model (FEM) of the temperature distribution in the multiple quantum wells (MQWs). We compare our system with the traditional Au-bump flip-chip LED and a flip-chip LED with a Distributed Bragg Reflector (DBR) layer. The simulation results have shown that the flip-chip LED with a metal reflective layer and symmetric electrode exhibits better heat dissipation performance, particularly at high input power. The influence of the insulating layer on the LED chip junction temperature is also examined. The simulation data establish an effect due to the thermal conductivity of the insulating layer in terms of heat dissipation, but this effect is negligible at an insulation layer thickness ≤1 µm.
在本研究中，我们制造了一种带有外延铟锡氧化物（ITO）接触层的368纳米发光二极管。我们分析了具有对称电极和金属反射层的倒装芯片发光二极管的热性能，应用ANSYS构建了多量子阱（MQW）中温度分布的电热耦合有限元模型（FEM）。我们将我们的系统与传统的金凸点倒装芯片发光二极管以及带有分布式布拉格反射器（DBR）层的倒装芯片发光二极管进行了比较。模拟结果表明，具有金属反射层和对称电极的倒装芯片发光二极管具有更好的散热性能，尤其是在高输入功率下。还研究了绝缘层对发光二极管芯片结温的影响。模拟数据证实了绝缘层的热导率在散热方面的作用，但在绝缘层厚度≤1微米时，这种作用可以忽略不计。
