Lerttraikul Kittitat, Rattanasakuldilok Wirunchana, Pakornchote Teerachote, Bovornratanaraks Thiti, Klanurak Illias, Taychatanapat Thiti, Srathongsian Ladda, Seriwatanachai Chaowaphat, Kanjanaboos Pongsakorn, Chatraphorn Sojiphong, Kittiwatanakul Salinporn
Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330, Thailand.
Department of Physics, Accelerator Laboratory, University of Jyväskylä, P.O. Box 35(YFL), 40014, Jyväskylä, Finland.
Sci Rep. 2024 Feb 24;14(1):4545. doi: 10.1038/s41598-024-54844-w.
High-quality VO[Formula: see text] films were fabricated on top of c-Al[Formula: see text]O[Formula: see text] substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO[Formula: see text] heterostructure were conducted. Graphene layers were placed on top of [Formula: see text] 50 and [Formula: see text] 100 nm VO[Formula: see text]. The graphene layers were introduced using mechanical exfoliate and CVD graphene wet-transfer method to prevent the worsening crystallinity of VO[Formula: see text], to avoid the strain effect from lattice mismatch and to study how VO[Formula: see text] can affect the graphene layer. Slight increases in graphene/VO[Formula: see text] T[Formula: see text] compared to pure VO[Formula: see text] by [Formula: see text] 1.9 [Formula: see text]C and [Formula: see text] 3.8 [Formula: see text]C for CVD graphene on 100 and 50 nm VO[Formula: see text], respectively, were observed in temperature-dependent resistivity measurements. As the strain effect from lattice mismatch was minimized in our samples, the increase in T[Formula: see text] may originate from a large difference in the thermal conductivity between graphene and VO[Formula: see text]. Temperature-dependent Raman spectroscopy measurements were also performed on all samples, and the G-peak splitting into two peaks, G[Formula: see text] and G[Formula: see text], were observed on graphene/VO[Formula: see text] (100 nm) samples. The G-peak splitting is a reversible process and may originates from in-plane asymmetric tensile strain applied under the graphene layer due to the VO[Formula: see text] phase transition mechanism. The 2D-peak measurements also show large blue-shifts around 13 cm[Formula: see text] at room temperature and slightly red-shifts trend as temperature increases for 100 nm VO[Formula: see text] samples. Other electronic interactions between graphene and VO[Formula: see text] are expected as evidenced by 2D-peak characteristic observed in Raman measurements. These findings may provide a better understanding of graphene/VO[Formula: see text] and introduce some new applications that utilize the controllable structural properties of graphene via the VO[Formula: see text] phase transition.
采用反应偏压靶离子束沉积(RBTIBD)技术在c-Al₂O₃衬底上制备了高质量的VO₂薄膜,并对石墨烯/VO₂异质结构进行了研究。将石墨烯层置于50nm和100nm厚的VO₂之上。通过机械剥离和化学气相沉积(CVD)石墨烯湿法转移方法引入石墨烯层,以防止VO₂结晶度变差,避免晶格失配产生的应变效应,并研究VO₂如何影响石墨烯层。在与温度相关的电阻率测量中,观察到与纯VO₂相比,石墨烯/VO₂的T₀分别有1.9℃和3.8℃的轻微升高,其中100nm和50nm VO₂上的CVD石墨烯分别对应这一升高数值。由于我们样品中晶格失配产生的应变效应被最小化,T₀的升高可能源于石墨烯和VO₂之间热导率的巨大差异。还对所有样品进行了与温度相关的拉曼光谱测量,在石墨烯/VO₂(100nm)样品上观察到G峰分裂为两个峰,即G⁺和G⁻。G峰分裂是一个可逆过程,可能源于VO₂相变机制在石墨烯层下方施加的面内不对称拉伸应变。对于100nm VO₂样品,二维峰测量还显示在室温下约13cm⁻¹处有较大的蓝移,并且随着温度升高有轻微的红移趋势。拉曼测量中观察到的二维峰特征表明,石墨烯和VO₂之间存在其他电子相互作用。这些发现可能有助于更好地理解石墨烯/VO₂,并引入一些利用VO₂相变可控结构特性的新应用。