Seid Biruk Alebachew, Sarisozen Sema, Peña-Camargo Francisco, Ozen Sercan, Gutierrez-Partida Emilio, Solano Eduardo, Steele Julian A, Stolterfoht Martin, Neher Dieter, Lang Felix
Institute of Physics and Astronomy, University of Potsdam, D-14476, Potsdam-Golm, Germany.
NCD-SWEET Beamline, ALBA Synchrotron Light Source, Cerdanyola del Vallès, Barcelona, 08290, Spain.
Small. 2024 Jul;20(30):e2311097. doi: 10.1002/smll.202311097. Epub 2024 Feb 27.
Combining high efficiency with good radiation tolerance, perovskite solar cells (PSCs) are promising candidates to upend expanding space photovoltaic (PV) technologies. Successful employment in a Near-Earth space environment, however, requires high resistance against atomic oxygen (AtOx). This work unravels AtOx-induced degradation mechanisms of PSCs with and without phenethylammonium iodide (PEAI) based 2D-passivation and investigates the applicability of ultrathin silicon oxide (SiO) encapsulation as AtOx barrier. AtOx exposure for 2 h degraded the average power conversion efficiency (PCE) of devices without barrier encapsulation by 40% and 43% (w/o and with 2D-PEAI-passivation) of their initial PCE. In contrast, devices with a SiO-barrier retained over 97% of initial PCE. To understand why 2D-PEAI passivated devices degrade faster than less efficient non-passivated devices, various opto-electrical and structural characterications are conducted. Together, these allowed to decouple different damage mechanisms. Notably, pseudo-J-V curves reveal unchanged high implied fill factors (pFF) of 86.4% and 86.2% in non-passivated and passivated devices, suggesting that degradation of the perovskite absorber itself is not dominating. Instead, inefficient charge extraction and mobile ions, due to a swiftly degrading PEAI interlayer are the primary causes of AtOx-induced device performance degradation in passivated devices, whereas a large ionic FF loss limits non-passivated devices.
钙钛矿太阳能电池（PSCs）兼具高效率和良好的耐辐射性，是有望颠覆不断发展的空间光伏（PV）技术的候选者。然而，要在近地空间环境中成功应用，需要对原子氧（AtOx）具有高抗性。这项工作揭示了有无基于苯乙铵碘化物（PEAI）的二维钝化的PSCs中AtOx诱导的降解机制，并研究了超薄氧化硅（SiO）封装作为AtOx阻挡层的适用性。暴露于AtOx 2小时会使没有阻挡层封装的器件的平均功率转换效率（PCE）降低其初始PCE的40%和43%（无二维PEAI钝化和有二维PEAI钝化）。相比之下，具有SiO阻挡层的器件保留了超过97%的初始PCE。为了理解为什么二维PEAI钝化的器件比效率较低的未钝化器件降解得更快，进行了各种光电和结构表征。这些共同作用使得能够区分不同的损伤机制。值得注意的是，伪J-V曲线显示未钝化和钝化器件的高隐含填充因子（pFF）分别为86.4%和86.2%不变，这表明钙钛矿吸收体本身的降解并不占主导。相反，由于PEAI中间层迅速降解导致的电荷提取效率低下和移动离子是钝化器件中AtOx诱导器件性能降解的主要原因，而大的离子填充因子损失限制了未钝化器件。
