Morin Theodore J, Peters Jonathan, Li Mingxiao, Guo Joel, Wan Yating, Xiang Chao, Bowers John E
Opt Lett. 2024 Mar 1;49(5):1197-1200. doi: 10.1364/OL.516486.
Thin-film lithium niobate (TFLN) is an attractive platform for photonic applications on account of its wide bandgap, its large electro-optic coefficient, and its large nonlinearity. Since these characteristics are used in systems that require a coherent light source, size, weight, power, and cost can be reduced and reliability enhanced by combining TFLN processing and heterogeneous laser fabrication. Here, we report the fabrication of laser devices on a TFLN wafer and also the coprocessing of five different GaAs-based III-V epitaxial structures, including InGaAs quantum wells and InAs quantum dots. Lasing is observed at wavelengths near 930, 1030, and 1180 nm, which, if frequency-doubled using TFLN, would produce blue, green, and orange visible light. A single-sided power over 25 mW is measured with an integrating sphere.
薄膜铌酸锂（TFLN）因其宽带隙、大电光系数和大非线性特性，是光子应用的一个有吸引力的平台。由于这些特性用于需要相干光源的系统中，通过将TFLN处理与异质激光制造相结合，可以减小尺寸、重量、功耗并降低成本，同时提高可靠性。在此，我们报告了在TFLN晶圆上制造激光器件，以及对包括InGaAs量子阱和InAs量子点在内的五种不同基于GaAs的III-V族外延结构进行协同处理的情况。在接近930、1030和1180 nm的波长处观察到了激光发射，若使用TFLN进行倍频，将产生蓝色、绿色和橙色可见光。使用积分球测量得到单边功率超过25 mW。
