Huang Tzu-Yang, Bansal Radhika, Ghosh Soumava, Lee Kwang Hong, Chen Qimiao, Tan Chuan Seng, Chang Guo-En
Opt Lett. 2024 Mar 1;49(5):1281-1284. doi: 10.1364/OL.517863.
We report high-performance germanium-on-insulator (GeOI) waveguide photodetectors (WGPDs) for electronic-photonic integrated circuits (EPICs) operating at telecommunication wavelengths. The GeOI samples were fabricated using layer transfer and wafer-bonding techniques, and a high-quality Ge active layer was achieved. Planar lateral p-i-n WGPDs were fabricated and characterized, and they exhibited a low dark current of 0.1 µA. Strain-induced alterations in the optical properties were observed, resulting in an extended photodetection range up to λ = 1638 nm. This range encompasses crucial telecommunication bands. The WGPDs exhibited a high responsivity of 0.56 A/W and a high detectivity of = 1.87 ×10cmHzW at 1550 nm. A frequency-response analysis revealed that increasing the bias voltage from -1 to -9 V enhances the 3-dB bandwidth from 31 to 49 MHz. This study offers a comprehensive understanding of GeOI WGPDs, fostering high-performance EPICs with implications for telecommunications and beyond.
我们报道了用于工作在电信波长的电子 - 光子集成电路（EPIC）的高性能绝缘体上锗（GeOI）波导光电探测器（WGPD）。GeOI样品采用层转移和晶圆键合技术制造，并获得了高质量的Ge有源层。制备并表征了平面横向p-i-n WGPD，其表现出0.1 μA的低暗电流。观察到应变引起的光学性质变化，从而将光探测范围扩展到高达λ = 1638 nm。该范围涵盖了关键的电信频段。WGPD在1550 nm处表现出0.56 A/W的高响应度和 = 1.87×10cmHzW的高探测率。频率响应分析表明，将偏置电压从 -1 V增加到 -9 V可将3 dB带宽从31 MHz提高到49 MHz。这项研究提供了对GeOI WGPD的全面理解，有助于推动高性能EPIC的发展，对电信及其他领域具有重要意义。
