Dielectric engineered graphene transistors for high-performance near-infrared photodetection.

Graphene, known for its ultrahigh carrier mobility and broadband optical absorption, holds significant potential in optoelectronics. However, the carrier mobility of graphene on silicon substrates experienced a marked decrease due to surface roughness, phonon scattering affects. Here we report carrier mobility enhancement of graphene dielectric engineering. Through the fabrication of devices utilizing Si/SiO/AlO/graphene layers and subsequent electrical characterization, our findings illustrate the navigable nature of the AlO dielectric layer is navigable for reducing the SiO phonon scattering and increasing graphene's carrier mobility by up to ∼8000 cmVs. Furthermore, the improvement in carrier mobility of graphene has been utilized in the hybrid near-infrared photodetector, resulting in outstanding responsivity of ∼400 AW, detectivity of ∼2.2 ✕ 10 Jones in the graphene/AgTe detector. Our study establishes pathways for the seamless integration of graphene or other 2D materials within the standard CMOS processes, thereby facilitating the fabrication of advanced optoelectronic devices.