通过化学气相沉积法生长的高迁移率、湿法转移石墨烯
High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition.
作者信息
De Fazio Domenico, Purdie David G, Ott Anna K, Braeuninger-Weimer Philipp, Khodkov Timofiy, Goossens Stijn, Taniguchi Takashi, Watanabe Kenji, Livreri Patrizia, Koppens Frank H L, Hofmann Stephan, Goykhman Ilya, Ferrari Andrea C, Lombardo Antonio
机构信息
Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , U.K.
Department of Engineering , University of Cambridge , Cambridge CB3 0FA , U.K.
出版信息
ACS Nano. 2019 Aug 27;13(8):8926-8935. doi: 10.1021/acsnano.9b02621. Epub 2019 Aug 7.
We report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to ∼70000 cm V s at room temperature and ∼120 000 cm V s at 9K. These are more than twice those of previous wet-transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room-temperature mobilities of ∼30 000 cm V s. These results show that, with appropriate encapsulation and cleaning, room-temperature mobilities well above 10 000 cm V s can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.
我们报道了通过化学气相沉积（CVD）生长的单层石墨烯在湿法转移到SiO₂和六方氮化硼（hBN）封装后具有较高的室温迁移率。通过去除 trapped 在单晶石墨烯与hBN之间界面处的污染物，我们在室温下实现了高达约70000 cm² V⁻¹ s⁻¹ 的迁移率，在9K时达到约120000 cm² V⁻¹ s⁻¹。这些迁移率是之前湿法转移石墨烯的两倍多，并且与通过干法转移制备的样品相当。我们还研究了多晶石墨烯中热退火和封装的联合方法，实现了约30000 cm² V⁻¹ s⁻¹ 的室温迁移率。这些结果表明，通过适当的封装和清洁，在通过CVD生长并使用传统的、易于扩展的基于聚甲基丙烯酸甲酯（PMMA）的湿法进行转移的样品中，可以获得远高于10000 cm² V⁻¹ s⁻¹ 的室温迁移率。 （注：原文中“trapped”一词有误，推测可能是“trapped”，翻译为“被困住的” ）
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