Chang Yufang, Zhang Zhijun, Deng Li, Wu Yanzhao, Zhang Xianmin
Public Basic Department, Shenyang Conservatory of Music, Shenyang 110818, China.
School of Electrical and Automation Engineering, Liaoning Institute of Science and Technology, Benxi 117004, China.
Materials (Basel). 2024 Jul 5;17(13):3331. doi: 10.3390/ma17133331.
Ferrovalley materials are garnering significant interest for their potential roles in advancing information processing and enhancing data storage capabilities. This study utilizes first-principles calculations to determine that the Janus monolayer TiTeCl exhibits the properties of a ferrovalley semiconductor. This material demonstrates valley polarization with a notable valley splitting of 80 meV. Additionally, the Berry curvature has been computed across the first Brillouin zone of the monolayer TiTeCl. The research also highlights that topological phase transitions ranging from ferrovalley and half-valley metals to quantum anomalous Hall effect states can occur in monolayer TiTeCl under compressive strains ranging from -1% to 0%. Throughout these strain changes, monolayer TiTeCl maintains its ferromagnetic coupling. These characteristics make monolayer TiTeCl a promising candidate for the development of new valleytronic and topological devices.
铁谷材料因其在推进信息处理和增强数据存储能力方面的潜在作用而备受关注。本研究利用第一性原理计算确定,Janus单层TiTeCl具有铁谷半导体的特性。这种材料表现出谷极化,谷分裂显著,为80毫电子伏特。此外,还计算了单层TiTeCl第一布里渊区的贝里曲率。该研究还强调,在-1%至0%的压缩应变下,单层TiTeCl中会发生从铁谷和半谷金属到量子反常霍尔效应态的拓扑相变。在这些应变变化过程中,单层TiTeCl保持其铁磁耦合。这些特性使单层TiTeCl成为开发新型谷电子学和拓扑器件的有前途的候选材料。