Zhai Rongjing, Bi Jiachang, Zheng Shun, Chen Wei, Lin Yu, Xiao Shaozhu, Cao Yanwei
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
University of Science and Technology of China, Hefei, 230026, China.
Discov Nano. 2024 Mar 11;19(1):42. doi: 10.1186/s11671-024-03978-x.
Vanadium nitride (VN) is a transition-metal nitride with remarkable properties that have prompted extensive experimental and theoretical investigations in recent years. However, there is a current paucity of experimental research investigating the temperature-dependent electronic structure of single-crystalline VN. In this study, high-quality VN(111) films were successfully synthesized on -Al O (0001) substrates using magnetron sputtering. The crystal and electronic structures of the VN films were characterized by a combination of high-resolution X-ray diffraction, low-energy electron diffraction, resonant soft X-ray absorption spectroscopy, and ultraviolet photoelectron spectroscopy. The electrical transport measurements indicate that the superconducting critical temperature of the VN films is around 8.1 K. Intriguingly, the temperature-dependent photoelectron spectroscopy measurements demonstrate a weak temperature dependence in the electronic structure of the VN films, which is significant for understanding the ground state of VN compounds.
氮化钒（VN）是一种过渡金属氮化物，具有显著的特性，近年来引发了广泛的实验和理论研究。然而，目前缺乏对单晶VN随温度变化的电子结构进行研究的实验。在本研究中，利用磁控溅射在-Al₂O₃(0001)衬底上成功合成了高质量的VN(111)薄膜。通过高分辨率X射线衍射、低能电子衍射、共振软X射线吸收光谱和紫外光电子能谱相结合的方法对VN薄膜的晶体结构和电子结构进行了表征。电输运测量表明，VN薄膜的超导临界温度约为8.1 K。有趣的是，随温度变化的光电子能谱测量表明，VN薄膜的电子结构对温度的依赖性较弱，这对于理解VN化合物的基态具有重要意义。
