Ding Mingjian, Xie Bing, Lv Ming, Lu Zhenya
School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China.
College of Material Science and Engineering, Sichuan University, Chengdu 610064, China.
Materials (Basel). 2024 Feb 29;17(5):1120. doi: 10.3390/ma17051120.
CaZrO (CZO) thin films were deposited on Pt/Ti/SiO/Si substrates at 450 °C by radio-frequency magnetron sputtering technology. The microstructures and dielectric properties of CZO thin films were investigated. X-ray diffraction analysis reveals that the perovskite orthogonal CZO phase would be promoted by a higher O partial pressure in the flow ratio of O/Ar after thin films were annealed at 700 °C for 3 h in air. The films prepared under the flow ratio of O/Ar (20:40, 30:40 and 40:40) show the main perovskite crystal phase of CaZrO with a small amount of Ca.Zr.O.. The main crystal phase was Ca.Zr.O. when the film was deposited under an O/Ar ratio of 40:10. The annealed film with a 40:40 O/Ar ratio exhibits a dielectric performance with a high dielectric constant (εr) of 25 at 1 MHz, a temperature coefficient of permittivity of not more than 122.7 ppm/°C from 0 °C to 125 °C, and a low leakage current density of about 2 × 10 A/cm at 30 V with an ohmic conduction mechanism.
采用射频磁控溅射技术在450℃下将CaZrO（CZO）薄膜沉积在Pt/Ti/SiO/Si衬底上。对CZO薄膜的微观结构和介电性能进行了研究。X射线衍射分析表明，在空气中700℃退火3 h后，在O/Ar流量比中较高的O分压会促进钙钛矿正交CZO相的形成。在O/Ar流量比为（20:40、30:40和40:40）下制备的薄膜显示出主要的钙钛矿CaZrO晶相以及少量的Ca.Zr.O.。当薄膜在O/Ar比为40:10的条件下沉积时，主要晶相为Ca.Zr.O。O/Ar比为40:40的退火薄膜在1 MHz时表现出高介电常数（εr）为25的介电性能，从0℃到125℃的介电常数温度系数不超过122.7 ppm/℃，在30 V时具有约2×10 A/cm的低漏电流密度，且具有欧姆传导机制。
