Department of Physics, Cotton University, Guwahati, India.
Luminescence. 2024 Mar;39(3):e4718. doi: 10.1002/bio.4718.
The structural, surface morphological, optical absorption and emission features of Y O :Ce (0%-5%) were studied. The samples had a body-centred cubic crystal structure. The undoped sample had a crystallite size of 29.03 nm, and it varied after doping with Ce. The grain size of the samples varied from 23.00 to 50.78 nm. All the samples exhibited a strong absorption band at 206 nm due to F-centre absorption and absorption involving the delocalised bands. In addition, the doped samples exhibited a secondary band at ~250 nm due to 4f → 5d transitions of Ce ions. The optical bandgap of the undoped sample was found to be ~5.37 eV, and it decreased to 5.20 eV with an increase in Ce concentration to 5%. The undoped sample under 350-nm excitation exhibited a broad photoluminescence (PL) emission band with the maxima at 406 nm and a secondary band at 463 nm. In contrast, multiple PL peaks were centred at ~397, 436, 466, 488 and 563 nm in all the doped samples. The average lifetime of the emission band at 406 nm was 1.05 ns and that of the emission band at ~466 nm was 1.63 ns. The material has potential for solid-state lighting applications.
研究了 Y O :Ce（0%-5%）的结构、表面形貌、光吸收和发射特性。样品具有体心立方晶体结构。未掺杂样品的晶粒尺寸为 29.03nm，掺杂 Ce 后发生变化。样品的晶粒尺寸从 23.00nm 变化到 50.78nm。所有样品在 206nm 处都表现出强烈的吸收带，这归因于 F 中心吸收和涉及离域带的吸收。此外，掺杂样品在250nm 处表现出二次带，这归因于 Ce 离子的 4f→5d 跃迁。未掺杂样品的光学带隙约为 5.37eV，随着 Ce 浓度增加到 5%，带隙减小到 5.20eV。在 350nm 激发下，未掺杂样品表现出宽的光致发光（PL）发射带，其最大值位于 406nm，二次带位于 463nm。相比之下，所有掺杂样品的 PL 峰均集中在397、436、466、488 和 563nm 处。406nm 发射带的平均寿命为 1.05ns，~466nm 发射带的平均寿命为 1.63ns。该材料具有用于固态照明应用的潜力。
