Hsiao Fu-He, Miao Wen-Chien, Lee Tzu-Yi, Pai Yi-Hua, Hung Yu-Ying, Iida Daisuke, Lin Chun-Liang, Chow Chi-Wai, Lin Gong-Ru, Ohkawa Kazuhiro, Kuo Hao-Chung, Hong Yu-Heng
Semiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan.
Department of Electrophysics, College of Science, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Sci Rep. 2024 Mar 25;14(1):7018. doi: 10.1038/s41598-024-57132-9.
This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 μm × 8 micro-LED arrays exhibit maximum EQE values of 11.56% and 5.47% for yellow and red variants, respectively. Notably, the yellow micro-LED arrays achieve data rates exceeding 1 Gbit/s for non-return-to-zero on-off keying (NRZ-OOK) format and 1.5 Gbit/s for orthogonal frequency-division multiplexing (OFDM) format. These findings underscore the significant potential of long-wavelength InGaN-based micro-LEDs, positioning them as highly promising candidates for both full-color microdisplays and visible light communication applications.
本研究展示了一种通过精确控制量子阱中的铟含量来实现高性能黄色和红色微发光二极管的方法。通过采用我们的六项核心技术的混合量子阱结构,我们可以实现出色的外部量子效率(EQE)和强大的条纹带宽。由此产生的30μm×8微发光二极管阵列,黄色和红色变体的最大EQE值分别为11.56%和5.47%。值得注意的是,黄色微发光二极管阵列在非归零开关键控(NRZ-OOK)格式下实现了超过1 Gbit/s的数据速率,在正交频分复用(OFDM)格式下实现了1.5 Gbit/s的数据速率。这些发现突出了基于长波长氮化铟镓的微发光二极管的巨大潜力,使其成为全彩微显示器和可见光通信应用中极具前景的候选者。