多面体低聚倍半硅氧烷（POSS）光刻胶的进展：对光刻系统的全面综述

Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems.

作者信息

Wen Zaoxia, Liu Xingyu, Chen Wenxiu, Zhou Ruolin, Wu Hao, Xia Yongmei, Wu Lianbin

机构信息

College of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China.

出版信息

Polymers (Basel). 2024 Mar 19;16(6):846. doi: 10.3390/polym16060846.

DOI:10.3390/polym16060846

PMID:38543451

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10974684/

Abstract

This paper offers a comprehensive overview of the polyhedral oligomeric silsesquioxane (POSS) and POSS-based composites within the realm of photoresist resin. The study involves a systematic exploration and discussion of the contributions made by POSS across various lithographic systems, with specific emphasis on critical parameters such as film formation, sensitivity, resolution, solubility, and edge roughness. These lithographic systems encompass X-ray lithography (XRL), deep ultraviolet nanoimprint lithography (DUV-NIL), extreme ultraviolet lithography (EUV), and guided self-assembled lithography (DSA). The principal objective of this paper is to furnish valuable insights into the development and utilization of POSS-based photoresist materials in diverse lithographic contexts.

摘要

本文全面概述了光刻胶树脂领域中的多面体低聚倍半硅氧烷（POSS）及其基复合材料。该研究系统地探索和讨论了POSS在各种光刻系统中的作用，特别强调了诸如成膜、灵敏度、分辨率、溶解性和边缘粗糙度等关键参数。这些光刻系统包括X射线光刻（XRL）、深紫外纳米压印光刻（DUV-NIL）、极紫外光刻（EUV）和导向自组装光刻（DSA）。本文的主要目的是为在不同光刻环境中开发和利用基于POSS的光刻胶材料提供有价值的见解。