Krimi Moufida, Hajlaoui Fadhel, Abdelbaky Mohammed S M, Garcia-Granda Santiago, Ben Rhaiem Abdallah
Laboratory LaSCOM, Faculty of Sciences of Sfax, University of Sfax BP1171 3000 Sfax Tunisia
Laboratoire Physico-chimie de l'Etat Solide, D'epartement de Chimie, Facult'e des Sciences de Sfax, Universit'e de Sfax B.P. 1171 3000 Sfax Tunisia.
RSC Adv. 2024 Mar 27;14(15):10219-10228. doi: 10.1039/d4ra01151a. eCollection 2024 Mar 26.
Metallic perovskites have advantageous optical and electrical properties, making them a valuable class of semiconductors for the manufacturing of solar cells. CsMnBr is notable among them due to its important optical characteristics. The electrical and dielectric characteristics as a semiconductor are examined in this study. Direct transitions with a 3.29 eV bandgap and an Urbach energy of 0.96 eV are revealed by the results. Through AC conductivity, it demonstrated semiconductor characteristics at 443 K. The dielectric loss varied with frequency and peaked at high frequencies. Furthermore, as temperature rose, a relaxation peak in the electrical modulus was seen to migrate to higher frequencies. Ac conductivity is described by the double power law expression. The conduction in our compound is governed by small polaron tunneling. Based on the optical results reported in the bibliography for this sample, we realize the importance of examining the electrical characteristics to comprehend the semiconductor behavior of CsMnBr.
金属钙钛矿具有优异的光学和电学性能,使其成为制造太阳能电池的一类有价值的半导体。CsMnBr因其重要的光学特性而在其中尤为突出。本研究考察了其作为半导体的电学和介电特性。结果表明存在带隙为3.29 eV且乌尔巴赫能量为0.96 eV的直接跃迁。通过交流电导率,其在443 K时表现出半导体特性。介电损耗随频率变化并在高频处达到峰值。此外,随着温度升高,电模量中的弛豫峰向更高频率移动。交流电导率由双幂律表达式描述。我们化合物中的传导由小极化子隧穿控制。基于该样品参考文献中报道的光学结果,我们认识到研究电学特性对于理解CsMnBr的半导体行为的重要性。