Liu Dong, Jiang Xianyuan, Wang Hao, Chen Hao, Lu Ying-Bo, Dong Siyu, Ning Zhijun, Wang Yong, Wu Zhongchen, Ling Zongcheng
School of Space Science and Physics, Institute of Space Sciences, Shandong University, Weihai, 264209, China.
School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
Adv Sci (Weinh). 2024 Jun;11(22):e2400150. doi: 10.1002/advs.202400150. Epub 2024 Mar 29.
Perovskite single crystals have attracted tremendous attention owing to their excellent optoelectronic properties and stability compared to typical multicrystal structures. However, the growth of high-quality perovskite single crystals (PSCs) generally relies on temperature gradients or the introduction of additives to promote crystal growth. In this study, a vacuum evaporation crystallization technique is developed that allows PSCs to be grown under extremely stable conditions at constant temperature and without requiring additives to promote crystal growth. The new method enables the growth of PSCs of unprecedented quality, that is, MAPbBr single crystals that exhibit an ultranarrow full width at half maximum of 0.00701°, which surpasses that of all previously reported values. In addition, the MAPbBr single crystals deliver exceptional optoelectronic performance, including a long carrier lifetime of 1006 ns, an ultralow trap-state density of 3.67 × 10 cm, and an ultrahigh carrier mobility of 185.86 cm V s. This method is applicable to various types of PSCs, including organic-inorganic hybrids, fully inorganic structures, and low-dimensional structures.
与典型的多晶结构相比，钙钛矿单晶因其优异的光电性能和稳定性而备受关注。然而，高质量钙钛矿单晶（PSC）的生长通常依赖于温度梯度或添加促进晶体生长的添加剂。在本研究中，开发了一种真空蒸发结晶技术，该技术可使PSC在极其稳定的恒温条件下生长，且无需添加促进晶体生长的添加剂。这种新方法能够生长出前所未有的高质量PSC，即半高宽为0.00701°的超窄MAPbBr单晶，超过了此前所有报道的值。此外，MAPbBr单晶具有出色的光电性能，包括1006 ns的长载流子寿命、3.67×10 cm的超低陷阱态密度和185.86 cm V s的超高载流子迁移率。该方法适用于各种类型的PSC，包括有机-无机杂化物、全无机结构和低维结构。
