Liu Yucheng, Zhang Yunxia, Zhao Kui, Yang Zhou, Feng Jiangshan, Zhang Xu, Wang Kang, Meng Lina, Ye Haochen, Liu Ming, Liu Shengzhong Frank
Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.
iChEM, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China.
Adv Mater. 2018 May 29:e1707314. doi: 10.1002/adma.201707314.
By fine-tuning the crystal nucleation and growth process, a low-temperature-gradient crystallization method is developed to fabricate high-quality perovskite CH NH PbBr single crystals with high carrier mobility of 81 ± 5 cm V s (>3 times larger than their thin film counterpart), long carrier lifetime of 899 ± 127 ns (>5 times larger than their thin film counterpart), and ultralow trap state density of 6.2 ± 2.7 × 10 cm (even four orders of magnitude lower than that of single-crystalline silicon wafers). In fact, they are better than perovskite single crystals reported in prior work: their application in photosensors gives superior detectivity as high as 6 × 10 Jones, ≈10-100 times better than commercial sensors made of silicon and InGaAs. Meanwhile, the response speed is as fast as 40 µs, ≈3 orders of magnitude faster than their thin film devices. A large-area (≈1300 mm ) imaging assembly composed of a 729-pixel sensor array is further designed and constructed, showing excellent imaging capability thanks to its superior quality and uniformity. This opens a new possibility to use the high-quality perovskite single-crystal-based devices for more advanced imaging sensors.
通过微调晶体成核和生长过程，开发了一种低温梯度结晶方法来制备高质量的钙钛矿CH₃NH₃PbBr₃单晶，其具有81±5 cm² V⁻¹ s⁻¹的高载流子迁移率（比其薄膜对应物大3倍以上）、899±127 ns的长载流子寿命（比其薄膜对应物大5倍以上）以及6.2±2.7×10¹⁵ cm⁻³的超低陷阱态密度（甚至比单晶硅晶片低四个数量级）。事实上，它们优于先前工作中报道的钙钛矿单晶：它们在光电探测器中的应用具有高达6×10¹² Jones的卓越探测率，比由硅和InGaAs制成的商业传感器好约10 - 100倍。同时，响应速度快至40 µs，比其薄膜器件快约3个数量级。进一步设计并构建了一个由729像素传感器阵列组成的大面积（≈1300 mm²）成像组件，由于其卓越的品质和均匀性，显示出出色的成像能力。这为将基于高质量钙钛矿单晶的器件用于更先进的成像传感器开辟了新的可能性。
