Jin Xin, Xu Jinbin, Xue Cuiwei, Guo Chenxing, Fu Liucheng, Liu Min, Shen Yunliang, Quan Xueling, Cheng Xiulan
Opt Lett. 2024 Apr 1;49(7):1856-1859. doi: 10.1364/OL.519489.
Utilizing an automated optimization method, we propose a perfectly vertical grating coupler (PVGC) characterized by random structure, superior performance, simplified fabrication process, and increased minimum feature size (MFS). Within the range of MFS from 60 to 180 nm, the optimized PVGC exhibited a simulated coupling efficiency of approximately -2.0 dB at 1550 nm with a 34 nm 1-dB bandwidth. Experimental results for the PVGCs fabricated by electron beam lithography (EBL) demonstrated coupling efficiencies ranging from -2.5 to -2.8 dB with a 32 nm 1-dB bandwidth while maintaining high manufacturing tolerances. This represents the most outstanding experimental outcome to date regarding the coupling performance of a PVGC fabricated on a 220 nm silicon on insulator (SOI), without requiring any complex processes as reported in the existing literature.
利用一种自动优化方法,我们提出了一种具有随机结构、卓越性能、简化制造工艺和增加最小特征尺寸(MFS)的完美垂直光栅耦合器(PVGC)。在60至180纳米的MFS范围内,优化后的PVGC在1550纳米处表现出约-2.0分贝的模拟耦合效率,1分贝带宽为34纳米。通过电子束光刻(EBL)制造的PVGC的实验结果表明,耦合效率在-2.5至-2.8分贝之间,1分贝带宽为32纳米,同时保持了高制造容差。这代表了迄今为止在220纳米绝缘体上硅(SOI)上制造的PVGC的耦合性能方面最出色的实验结果,无需现有文献中报道的任何复杂工艺。