Iyer Prasad P, Prescott Samuel, Addamane Sadhvikas, Jung Hyunseung, Renteria Emma, Henshaw Jacob, Mounce Andrew, Luk Ting S, Mitrofanov Oleg, Brener Igal
Center for Integrated Nanotechnologies, Sandia National Lab, Albuquerque, New Mexico 87185, United States.
Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
Nano Lett. 2024 Apr 15. doi: 10.1021/acs.nanolett.3c04846.
Advancements in photonic quantum information systems (QIS) have driven the development of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots (QDs) as single photon sources. Strain-free, monodisperse, and spatially sparse local-droplet-etched (LDE) QDs have recently been demonstrated as a superior alternative to traditional Stranski-Krastanov QDs. However, integration of LDE QDs into nanophotonic architectures with the ability to scale to many interacting QDs is yet to be demonstrated. We present a potential solution by embedding isolated LDE GaAs QDs within an AlGaAs Huygens' metasurface with spectrally overlapping fundamental electric and magnetic dipolar resonances. We demonstrate for the first time a position- and size-independent, 1 order of magnitude increase in the collection efficiency and emission lifetime control for single-photon emission from LDE QDs embedded within the Huygens' metasurfaces. Our results represent a significant step toward leveraging the advantages of LDE QDs within nanophotonic architectures to meet the scalability demands of photonic QIS.
光子量子信息系统（QIS）的进展推动了高亮度、按需且不可区分的半导体外延量子点（QD）作为单光子源的发展。无应变、单分散且空间稀疏的局部液滴蚀刻（LDE）量子点最近已被证明是传统斯特兰斯基-克拉斯坦诺夫量子点的一种优越替代方案。然而，将LDE量子点集成到能够扩展到许多相互作用量子点的纳米光子结构中尚未得到证实。我们提出了一种潜在的解决方案，即将孤立的LDE GaAs量子点嵌入具有光谱重叠的基本电偶极和磁偶极共振的AlGaAs惠更斯超表面中。我们首次证明了嵌入惠更斯超表面内的LDE量子点单光子发射的收集效率提高了1个数量级，且与位置和尺寸无关，并实现了发射寿命控制。我们的结果代表了朝着利用纳米光子结构中LDE量子点的优势以满足光子QIS的可扩展性需求迈出的重要一步。
