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双轴应变下氮掺杂锑烯的电子结构和光学性质:第一性原理研究

Electronic structure and optical properties of nitrogen-doped antimonene under biaxial strain: first-principles study.

作者信息

Wei Ran, Liu Guili, Qian Shaoran, Su Dan, Zhang Guoying

机构信息

College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, People's Republic of China.

School of Physics, Shenyang Normal University, Shenyang, People's Republic of China.

出版信息

J Mol Model. 2024 Apr 22;30(5):143. doi: 10.1007/s00894-024-05937-w.

Abstract

CONTENT

In this thesis, the role of N atom doping and biaxial strain in modulating the electronic structure and optical properties of antimonene has been deeply investigated using a first-principles approach based on density-functional theory. The results show that N doping significantly reduces the band gap of antimonene and introduces new electronic states, thus affecting its electronic structure. In terms of optical properties, N doping reduces the static permittivity of antimonene and alters its absorption, reflection, and energy loss properties. In addition, biaxial strain further enhanced the modulation effect of these properties. This study not only provides theoretical support for the application of antimonene in the field of high-performance two-dimensional electronic and optoelectronic devices, but also reveals strain and doping as an effective means to modulate the physical properties of two-dimensional materials.

METHODS

For the calculations, we used the DFT-based CASTEP software package for the simulation of the electronic structure. In order to more accurately characterize the weak interactions between two-dimensional materials, we specifically introduced the Van der Waals dispersion correction. We have chosen the Perdew-Burke-Ernzerhof (PBE) exchange-correlation generalization under the generalized gradient approximation (GGA) and combined it with the Van der Waals correction term in order to fully consider the electronic structure of antimonene. For the calculation parameter settings, we set the truncation energy to 400 eV to ensure the accuracy of the calculation. Meanwhile, we adopt a 6 × 6 × 1 k-point grid for Brillouin zone sampling to obtain more accurate energy band structure and density of states information. For the convergence settings, the convergence criteria for both the system energy and the interaction force between atoms were set to 1 × 10 eV and 0.01 eV/Å, respectively. We selected a 3 × 3 × 1 supercell model with 18 Sb atoms. A vacuum thickness of 18 Å was established in the Z direction, which is sufficient to avoid interactions between the two atomic layers above and below the periodic structure.

摘要

内容

在本论文中,基于密度泛函理论的第一性原理方法被用于深入研究氮原子掺杂和双轴应变在调控锑烯电子结构和光学性质方面的作用。结果表明,氮掺杂显著降低了锑烯的带隙并引入了新的电子态,从而影响其电子结构。在光学性质方面,氮掺杂降低了锑烯的静态介电常数并改变了其吸收、反射和能量损失特性。此外,双轴应变进一步增强了这些性质的调制效果。本研究不仅为锑烯在高性能二维电子和光电器件领域的应用提供了理论支持,还揭示了应变和掺杂是调控二维材料物理性质的有效手段。

方法

对于计算,我们使用基于密度泛函理论的CASTEP软件包来模拟电子结构。为了更准确地表征二维材料之间的弱相互作用,我们特别引入了范德华色散校正。我们在广义梯度近似(GGA)下选择了Perdew-Burke-Ernzerhof(PBE)交换关联泛函,并将其与范德华校正项相结合,以便充分考虑锑烯的电子结构。对于计算参数设置,我们将截断能量设置为400 eV以确保计算的准确性。同时,我们采用6×6×1的k点网格进行布里渊区采样,以获得更准确的能带结构和态密度信息。对于收敛设置,系统能量和原子间相互作用力的收敛标准分别设置为1×10 eV和0.01 eV/Å。我们选择了一个包含18个Sb原子的3×3×1超胞模型。在Z方向建立了18 Å的真空厚度,这足以避免周期性结构上下两层原子之间的相互作用。

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