Chang Ting-Chun, Lee Ching-Ting, Lee Hsin-Ying
Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan.
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan.
Nanomaterials (Basel). 2024 Apr 10;14(8):657. doi: 10.3390/nano14080657.
In this work, guanidinium (GA) was doped into methylammonium lead triiodide (MAPbI) perovskite film to fabricate perovskite solar cells (PSCs). To determine the optimal formulation of the resulting guanidinium-doped MAPbI ((GA)(MA)PbI) for the perovskite active layer in PSCs, the perovskite films with various GA doping concentrations, annealing temperatures, and thicknesses were systematically modulated and studied. The experimental results demonstrated a 400-nm-thick (GA)(MA)PbI film, with 5% GA doping and annealed at 90 °C for 20 min, provided optimal surface morphology and crystallinity. The PSCs configured with the optimal (GA)(MA)PbI perovskite active layer exhibited an open-circuit voltage of 0.891 V, a short-circuit current density of 24.21 mA/cm, a fill factor of 73.1%, and a power conversion efficiency of 15.78%, respectively. Furthermore, the stability of PSCs featuring this optimized (GA)(MA)PbI perovskite active layer was significantly enhanced.
在本工作中,将胍盐(GA)掺杂到甲基铵碘化铅(MAPbI)钙钛矿薄膜中以制备钙钛矿太阳能电池(PSC)。为了确定所得掺杂胍盐的MAPbI((GA)(MA)PbI)用于PSC中钙钛矿活性层的最佳配方,系统地调节和研究了具有不同GA掺杂浓度、退火温度和厚度的钙钛矿薄膜。实验结果表明,400 nm厚的(GA)(MA)PbI薄膜,5%的GA掺杂,并在90°C下退火20分钟,具有最佳的表面形貌和结晶度。配置有最佳(GA)(MA)PbI钙钛矿活性层的PSC分别表现出开路电压0.891 V、短路电流密度24.21 mA/cm、填充因子73.1%和功率转换效率15.78%。此外,具有这种优化的(GA)(MA)PbI钙钛矿活性层的PSC的稳定性显著提高。