Xu Wanlu, Wang Wenwu, Zhang Xiaoshan, Yu Ping
College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China.
Materials (Basel). 2024 Apr 15;17(8):1812. doi: 10.3390/ma17081812.
Positive temperature coefficient of electrical resistivity (PTCR) materials with low Curie temperature have been paid increasing attention lately. In this study, PTCR materials with a Curie temperature of approximately -15 °C were investigated by La doping BaSrTiO ceramics. It could be expected to meet the requirements of thermal management systems for low-temperature control. In addition, a trace amount of BiNaTiO (BNT) was employed to improve the resistivity and the PTCR performance. A significant PTCR effect was achieved with a high resistivity jump of nearly four orders of magnitude, a high temperature coefficient of ~28.76%/°C, and a narrow transition temperature span of 22 °C in the (BaSr)LaTiO-0.0025BiNaTiO ceramics. The PTCR enhancement mechanism of BNT is discussed.
近年来，居里温度较低的正温度系数（PTCR）材料受到了越来越多的关注。在本研究中，通过La掺杂BaSrTiO陶瓷对居里温度约为-15°C的PTCR材料进行了研究。预计其能够满足低温控制热管理系统的要求。此外，还采用了微量的BiNaTiO（BNT）来提高电阻率和PTCR性能。在（BaSr）LaTiO-0.0025BiNaTiO陶瓷中实现了显著的PTCR效应，电阻率跃升近四个数量级，高温系数约为28.76%/°C，转变温度跨度窄至22°C。讨论了BNT的PTCR增强机制。
