Chen Fuyu, Zhao Bai-Qing, Huang Kaifeng, Ma Xiu-Fen, Li Hong-Yi, Zhang Xie, Diao Jiang, Yue Jili, Huang Guangsheng, Wang Jingfeng, Pan Fusheng
National Innovation Center for Lndustry-Education Integration of Energy Storage Technology, School of Materials Science and Engineering, Chongqing University, Chongqing, 400044, People's Republic of China.
National Magnesium Alloy Material Engineering Technology Research Center, Chongqing University, Chongqing, 400044, People's Republic of China.
Nanomicro Lett. 2024 Apr 29;16(1):184. doi: 10.1007/s40820-024-01410-8.
Rechargeable magnesium-metal batteries (RMMBs) are promising next-generation secondary batteries; however, their development is inhibited by the low capacity and short cycle lifespan of cathodes. Although various strategies have been devised to enhance the Mg migration kinetics and structural stability of cathodes, they fail to improve electronic conductivity, rendering the cathodes incompatible with magnesium-metal anodes. Herein, we propose a dual-defect engineering strategy, namely, the incorporation of Mg pre-intercalation defect (P-Mg) and oxygen defect (O), to simultaneously improve the Mg migration kinetics, structural stability, and electronic conductivity of the cathodes of RMMBs. Using lamellar VO·nHO as a demo cathode material, we prepare a cathode comprising MgVO·1.4HO nanobelts composited with reduced graphene oxide (MVOH/rGO) with P-Mg and O. The O enlarges interlayer spacing, accelerates Mg migration kinetics, and prevents structural collapse, while the P-Mg stabilizes the lamellar structure and increases electronic conductivity. Consequently, the MVOH/rGO cathode exhibits a high capacity of 197 mAh g, and the developed Mg foil//MVOH/rGO full cell demonstrates an incredible lifespan of 850 cycles at 0.1 A g, capable of powering a light-emitting diode. The proposed dual-defect engineering strategy provides new insights into developing high-durability, high-capacity cathodes, advancing the practical application of RMMBs, and other new secondary batteries.
可充电镁金属电池(RMMBs)是很有前景的下一代二次电池;然而,其发展受到阴极低容量和短循环寿命的抑制。尽管已经设计了各种策略来增强阴极的镁迁移动力学和结构稳定性,但它们未能提高电子导电性,导致阴极与镁金属阳极不兼容。在此,我们提出一种双缺陷工程策略,即引入镁预嵌入缺陷(P-Mg)和氧缺陷(O),以同时提高RMMBs阴极的镁迁移动力学、结构稳定性和电子导电性。以层状VO·nHO作为示范阴极材料,我们制备了一种阴极,其由具有P-Mg和O的与还原氧化石墨烯(MVOH/rGO)复合的MgVO·1.4HO纳米带组成。O扩大了层间距,加速了镁迁移动力学,并防止结构坍塌,而P-Mg稳定了层状结构并提高了电子导电性。因此,MVOH/rGO阴极表现出197 mAh g的高容量,并且所开发的镁箔//MVOH/rGO全电池在0.1 A g下展示了令人难以置信的850次循环寿命,能够为发光二极管供电。所提出的双缺陷工程策略为开发高耐久性、高容量阴极、推动RMMBs及其他新型二次电池的实际应用提供了新的见解。