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通过 CsPbBr 纳米晶体/Y6 异质结检测可见到近红外 II 光。

Detecting Visible to Near-Infrared II Light via CsPbBr Nanocrystals/Y6 Heterojunctions.

作者信息

Han Yue, Li Guohui, Ji Ting, Hao Yuying, Cui Yanxia

机构信息

College of Electronic Information and Optical Engineering, Key Lab of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China.

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030032, China.

出版信息

ACS Appl Mater Interfaces. 2024 May 15;16(19):25385-25392. doi: 10.1021/acsami.4c03712. Epub 2024 May 1.

Abstract

In the endeavor to develop advanced photodetectors (PDs) with superior performance, all-inorganic perovskites, recognized for their outstanding photoelectric properties, have emerged as highly promising materials. Due to their unique electronic structure and band characteristics, the majority of all-inorganic perovskite materials are not sensitive to near-infrared (NIR) light. Here, we demonstrate the fabrication of a high-performance broadband PD comprising CsPbBr perovskite NCs/Y6 planar heterojunctions. The incorporation of Y6 not only facilitates charge transfer from CsPbBr NCs to Y6 for enhancing photodetection performance under visible illumination but also broadens the absorption spectrum range of the whole device toward the NIR regime. As a result, the heterojunction PD exhibits a photo-to-dark-current ratio above 10, a dynamic range of 149.5 dB, and an impressive lowest detection limit of incident power density of 1.6 nW/cm under 505 nm illumination. In the NIR regime, where photon energy is below the bandgap of CsPbBr, electron-hole pairs can still be produced in the Y6 layer even when illuminated at 1120 nm. Consequently, photodetection is uniquely possible in PDs that incorporate heterojunctions when the illumination wavelength is longer than 565 nm. At 850 nm, the heterojunction device is capable of detecting light with power densities as low as 1.3 μW/cm corresponding to a LDR of 99.8 dB. The exceptional performance is attributed to the creation of a heterojunction between CsPbBr NCs and Y6. These findings propose a novel approach for developing broadband PDs based on perovskite NC materials.

摘要

在努力开发具有卓越性能的先进光电探测器(PDs)的过程中,全无机钙钛矿因其出色的光电性能而被认可,已成为极具潜力的材料。由于其独特的电子结构和能带特性,大多数全无机钙钛矿材料对近红外(NIR)光不敏感。在此,我们展示了一种由CsPbBr钙钛矿纳米晶/Y6平面异质结组成的高性能宽带PD的制备。Y6的引入不仅促进了电荷从CsPbBr纳米晶向Y6的转移,以增强可见光照射下的光电探测性能,还将整个器件的吸收光谱范围拓宽至近红外区域。结果,该异质结PD表现出高于10的光电流与暗电流之比、149.5 dB 的动态范围,以及在505 nm光照下令人印象深刻的1.6 nW/cm²的最低入射功率密度检测限。在近红外区域,光子能量低于CsPbBr的带隙时,即使在1120 nm光照下,Y6层中仍可产生电子 - 空穴对。因此,当光照波长大于565 nm时,在包含异质结的PD中进行光电探测是独特可行的。在850 nm处,该异质结器件能够检测功率密度低至1.3 μW/cm²的光,对应99.8 dB的光探测率。这种优异的性能归因于CsPbBr纳米晶与Y6之间形成的异质结。这些发现提出了一种基于钙钛矿纳米晶材料开发宽带PD的新方法。

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