Li Hongwang, Liu Chao, Ouyang Jun
Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China.
Key Laboratory of Key Film Materials & Application for Equipments (Hunan Province), Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University, Xiangtan 411105, China.
Nanomaterials (Basel). 2025 May 5;15(9):695. doi: 10.3390/nano15090695.
Ferroelectric thin films with a high dielectric tunability () have great potential in electrically tunable applications, including microwave tunable devices such as phase shifters, filters, delay lines, etc. Using a modified Landau-Devonshire type thermodynamic potential, we show that the dielectric tunability of a (001) tetragonal ferroelectric film can be analytically solved. After a survey of materials, a large value above 60% was predicted to be achievable in a (001)-oriented tetragonal Pb(ZrTi)O (PZT) film. Experimentally, (001)-oriented PZT thin films were prepared on LaNiO-coated (100) SrTiO substrates by using pulsed laser deposition (PLD). These films exhibited good dielectric tunability ( ~ 67.6%) measured at a small electric field of ~250 kV/cm (corresponding to 5 volts for a 200 nm thick film). It only dropped down to ~54.2% when was further reduced to 125 kV/cm (2.5 volts for 200 nm film). The measured dielectric tunability as functions of the applied electric field and measuring frequency are discussed for a 500 nm thick PZT film, with the former well described by the theoretical () curves and the latter showing a weak frequency dependence. These observations validate our integrated approach rooted in a theoretical understanding.
具有高介电可调性()的铁电薄膜在电可调应用中具有巨大潜力,包括微波可调器件,如移相器、滤波器、延迟线等。通过使用修正的朗道 - 德文希尔型热力学势,我们表明(001)四方铁电薄膜的介电可调性可以解析求解。在对材料进行调研后,预计在(001)取向的四方Pb(ZrTi)O(PZT)薄膜中可实现高于60%的大值。实验上,通过脉冲激光沉积(PLD)在LaNiO涂层的(100)SrTiO衬底上制备了(001)取向的PZT薄膜。这些薄膜在约250 kV/cm的小电场(对应于200 nm厚薄膜的5伏)下测量时表现出良好的介电可调性(约67.6%)。当进一步降至125 kV/cm(200 nm薄膜为2.5伏)时,它仅降至约54.2%。对于500 nm厚的PZT薄膜,讨论了测量的介电可调性随外加电场和测量频率的变化,前者能很好地由理论()曲线描述,后者显示出较弱的频率依赖性。这些观察结果验证了我们基于理论理解的综合方法。