Gao Wenjin, Zhi Guoxiang, Zhou Miao, Niu Tianchao
Tianmushan Laboratory, Hangzhou, 310023, China.
Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China.
Small. 2024 Aug;20(35):e2311317. doi: 10.1002/smll.202311317. Epub 2024 May 7.
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
二维材料的出现开启了对其合成、表征及应用的探索。尽管已经在各种金属衬底上合成了大量二维材料,但界面相互作用会显著影响其本征电子特性。此外,复杂的转移过程带来了更多挑战。在此背景下,实验工作致力于在具有重要技术意义的半导体/绝缘体衬底上直接生长。本综述旨在揭示衬底对二维材料生长的影响。重点关注用于外延生长的非金属衬底,以及这如何凸显了原子尺度上相工程和先进表征的必要性。特别关注具有拓扑性质的单元素二维结构。通过讨论将二维材料与当前基于半导体的技术集成的要求以及基于二维材料的异质结构的独特性质得出结论。总体而言,本综述描述了如何在非金属衬底上直接制备二维材料以及在原子尺度上对生长机制的探索。