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锡基焊料与n型Bi(Te,Se)热电材料之间的界面反应

Interfacial Reactions between Sn-Based Solders and n-Type Bi(Te,Se) Thermoelectric Material.

作者信息

Wang Chao-Hong, Chiu Chun-Wei, Li Mei-Hau

机构信息

Department of Chemical Engineering, National Chung Cheng University, Chiayi 621301, Taiwan.

出版信息

Materials (Basel). 2024 May 5;17(9):2158. doi: 10.3390/ma17092158.

DOI:10.3390/ma17092158
PMID:38730964
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11085345/
Abstract

This study investigated the interfacial reactions between n-type Bi(Te,Se) thermoelectric material, characterized by a highly-oriented (110) plane, and pure Sn and Sn-3.0Ag-0.5Cu (wt.%) solders, respectively. At 250 °C, the liquid-state Sn/Bi(Te,Se) reactions resulted in the formation of both SnTe and BiTe phases, with Bi-rich particles dispersed within the SnTe phase. The growth of the SnTe phase exhibited diffusion-controlled parabolic behavior over time. In contrast, the growth rate was considerably slower compared to that observed with p-type (Bi,Sb)Te. Solid-state Sn/Bi(Te,Se) reactions conducted between 160 °C and 200 °C exhibited similar interfacial microstructures. The SnTe phase remained the primary reaction product, embedded with tiny Bi-rich particles, revealing a diffusion-controlled growth. However, the BiTe layer had no significant growth. Further investigation into growth kinetics of intermetallic compounds and microstructural evolution was conducted to elucidate the reaction mechanism. The slower growth rates in Bi(Te,Se), compared to the reactions with (Bi,Sb)Te, could be attributed to the strong suppression effect of Se on SnTe growth. Additionally, the interfacial reactions of Bi(Te,Se) with Sn-3.0Ag-0.5Cu were also examined, showing similar growth behavior to those observed with Sn solder. Notably, compared with Ag, Cu tends to diffuse towards the interfacial reaction phases, resulting in a high Cu solubility within the SnTe phase.

摘要

本研究分别调查了具有高度取向（110）面特征的n型Bi(Te,Se)热电材料与纯Sn以及Sn-3.0Ag-0.5Cu（重量百分比）焊料之间的界面反应。在250℃时，液态Sn/Bi(Te,Se)反应导致形成了SnTe相和BiTe相，富Bi颗粒分散在SnTe相中。SnTe相的生长随时间呈现出扩散控制的抛物线行为。相比之下，与p型（Bi,Sb）Te相比，其生长速率要慢得多。在160℃至200℃之间进行的固态Sn/Bi(Te,Se)反应表现出相似的界面微观结构。SnTe相仍然是主要反应产物，内嵌有微小的富Bi颗粒，显示出扩散控制的生长。然而，BiTe层没有明显生长。对金属间化合物的生长动力学和微观结构演变进行了进一步研究，以阐明反应机理。与（Bi,Sb）Te的反应相比，Bi(Te,Se)中生长速率较慢可归因于Se对SnTe生长的强烈抑制作用。此外，还研究了Bi(Te,Se)与Sn-3.0Ag-0.5Cu的界面反应，其生长行为与Sn焊料的相似。值得注意的是，与Ag相比，Cu倾向于向界面反应相扩散，导致SnTe相中的Cu溶解度较高。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/288b/11085345/94d5dbf7844b/materials-17-02158-g011.jpg
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ACS Appl Mater Interfaces. 2020 Jun 17;12(24):27001-27009. doi: 10.1021/acsami.9b22853. Epub 2020 Jun 4.