Zhu Yuanhao, Feng Bohan, Su Yuhan, Li Guangyuan, Liu Yingming, Hou Yuxin, Zhang Jie, Li Wenjie, Zhong Guohua, Yang Chunlei, Chen Ming
Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.
University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Nano Lett. 2024 Jun 5;24(22):6778-6787. doi: 10.1021/acs.nanolett.4c01515. Epub 2024 May 20.
Controllable large-scale integration of two-dimensional (2D) materials with organic semiconductors and the realization of strong coupling between them still remain challenging. Herein, we demonstrate a wafer-scale, vertically layered SnSe/PTAA heterojunction array with high light-trapping ability via a low-temperature molecular beam epitaxy method and a facile spin-coating process. Conductive probe atomic force microscopy (CP-AFM) measurements reveal strong rectification and photoresponse behavior in the individual SnSe nanosheet/PTAA heterojunction. Theoretical analysis demonstrates that vertically layered SnSe/PTAA heterojunctions exhibit stronger C-Se covalent coupling than that of the conventional tiled type, which could facilitate more efficient charge transfer. Benefiting from these advantages, the SnSe/PTAA heterojunction photodetectors with an optimized PTAA concentration show high performance, including a responsivity of 41.02 A/W, an external quantum efficiency of 1.31 × 10%, and high uniformity. The proposed approach for constructing large-scale 2D inorganic-organic heterostructures represents an effective route to fabricate high-performance broadband photodetectors for integrated optoelectronic systems.
二维（2D）材料与有机半导体的可控大规模集成以及实现它们之间的强耦合仍然具有挑战性。在此，我们通过低温分子束外延方法和简便的旋涂工艺展示了一种具有高光捕获能力的晶圆级垂直分层SnSe/PTAA异质结阵列。导电探针原子力显微镜（CP-AFM）测量揭示了单个SnSe纳米片/PTAA异质结中的强整流和光响应行为。理论分析表明，垂直分层的SnSe/PTAA异质结比传统平铺型表现出更强的C-Se共价耦合，这可以促进更有效的电荷转移。受益于这些优点，具有优化PTAA浓度的SnSe/PTAA异质结光电探测器表现出高性能，包括41.02 A/W的响应度、1.31×10%的外量子效率和高均匀性。所提出的构建大规模二维无机-有机异质结构的方法代表了一种为集成光电子系统制造高性能宽带光电探测器的有效途径。
