Department of Cell Biology and Neuroscience, Department of Microbiology and Cell Biology, Montana State University, Bozeman, MT, USA.
Department of Biomedical Sciences, Cooper Medical School of Rowan University, Camden, NJ, USA.
J Gen Physiol. 2024 Jul 1;156(7). doi: 10.1085/jgp.202313467. Epub 2024 May 21.
The voltage-sensing domain (VSD) is a four-helix modular protein domain that converts electrical signals into conformational changes, leading to open pores and active enzymes. In most voltage-sensing proteins, the VSDs do not interact with one another, and the S1-S3 helices are considered mainly scaffolding, except in the voltage-sensing phosphatase (VSP) and the proton channel (Hv). To investigate its contribution to VSP function, we mutated four hydrophobic amino acids in S1 to alanine (F127, I131, I134, and L137), individually or in combination. Most of these mutations shifted the voltage dependence of activity to higher voltages; however, not all substrate reactions were the same. The kinetics of enzymatic activity were also altered, with some mutations significantly slowing down dephosphorylation. The voltage dependence of VSD motions was consistently shifted to lower voltages and indicated a second voltage-dependent motion. Additionally, none of the mutations broke the VSP dimer, indicating that the S1 impact could stem from intra- and/or intersubunit interactions. Lastly, when the same mutations were introduced into a genetically encoded voltage indicator, they dramatically altered the optical readings, making some of the kinetics faster and shifting the voltage dependence. These results indicate that the S1 helix in VSP plays a critical role in tuning the enzyme's conformational response to membrane potential transients and influencing the function of the VSD.
电压感应域(VSD)是一种四螺旋模块蛋白域,可将电信号转换为构象变化,导致孔道开放和酶的激活。在大多数电压感应蛋白中,VSD 之间不相互作用,并且 S1-S3 螺旋主要被认为是支架,除了在电压感应磷酸酶(VSP)和质子通道(Hv)中。为了研究其对 VSP 功能的贡献,我们将 S1 中的四个疏水性氨基酸突变为丙氨酸(F127、I131、I134 和 L137),分别或组合突变。这些突变中的大多数将活性的电压依赖性转移到更高的电压;然而,并非所有的底物反应都相同。酶活性的动力学也发生了改变,一些突变显著减缓了去磷酸化。VSD 运动的电压依赖性也一致地转移到较低的电压,并表明存在第二种电压依赖性运动。此外,没有一个突变破坏了 VSP 二聚体,这表明 S1 的影响可能源于同和/或异亚基相互作用。最后,当相同的突变被引入到遗传编码的电压指示剂中时,它们显著改变了光学读数,使一些动力学更快,并改变了电压依赖性。这些结果表明,VSP 中的 S1 螺旋在调节酶对膜电位瞬变的构象反应和影响 VSD 功能方面起着关键作用。