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用于微电子器件的钌铝电极的长期高温结构稳定性研究。

Study of the Long-Term High-Temperature Structural Stability of RuAl Electrodes for Microelectronic Devices.

作者信息

Seifert Marietta, Leszczynska Barbara, Gemming Thomas

机构信息

Leibniz Institute for Solid State and Materials Research, Helmholtzstr. 20, 01069 Dresden, Germany.

出版信息

Materials (Basel). 2024 May 18;17(10):2431. doi: 10.3390/ma17102431.

DOI:10.3390/ma17102431
PMID:38793497
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11123010/
Abstract

The high-temperature stability of RuAl-based electrodes for application in microelectronic devices is analyzed for long-term duration. The electrodes are prepared on CaTaGaSiO (CTGS) substrates using SiO and Al-N-O cover and barrier layers as oxidation protection. The samples are annealed at 600, 700, or 800 °C in air for 192 h. Minor degradation is observed after thermal loading at 700 °C. The annealing at 800 °C for 192 h leads to a partial oxidation of the Al in the extended contact pad and to a complete oxidation of the Al within the structured interconnect electrodes. The different degradation of the interconnect electrodes and the contact pads is caused by their different lateral dimensions. In summary, long-term high-temperature stability is demonstrated up to at least 700 °C in air. Less oxidizing atmospheres should allow the application at higher temperatures and for a significantly longer duration.

摘要

对用于微电子器件的钌铝基电极的高温稳定性进行了长期分析。电极是在CaTaGaSiO(CTGS)衬底上制备的,使用SiO和Al-N-O覆盖层及阻挡层作为氧化保护。样品在空气中600、700或800℃退火192小时。在700℃热加载后观察到轻微降解。在800℃退火192小时导致扩展接触垫中的铝部分氧化,以及结构化互连电极中的铝完全氧化。互连电极和接触垫的不同降解是由它们不同的横向尺寸引起的。总之,在空气中至少700℃时证明了长期高温稳定性。氧化性较小的气氛应允许在更高温度下应用且持续时间显著更长。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0ec/11123010/79e3b02b4004/materials-17-02431-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0ec/11123010/c8da68c3bdb9/materials-17-02431-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0ec/11123010/b1fc54214d01/materials-17-02431-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0ec/11123010/fa4f05f5d506/materials-17-02431-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0ec/11123010/8290125f717a/materials-17-02431-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0ec/11123010/79e3b02b4004/materials-17-02431-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0ec/11123010/c8da68c3bdb9/materials-17-02431-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0ec/11123010/b1fc54214d01/materials-17-02431-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0ec/11123010/fa4f05f5d506/materials-17-02431-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0ec/11123010/8290125f717a/materials-17-02431-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b0ec/11123010/79e3b02b4004/materials-17-02431-g005.jpg

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本文引用的文献

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High Temperature Behavior of RuAl Thin Films on Piezoelectric CTGS and LGS Substrates.
压电CTGS和LGS衬底上RuAl薄膜的高温行为
Materials (Basel). 2020 Apr 1;13(7):1605. doi: 10.3390/ma13071605.
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Improvement of High-Temperature Stability of Al₂O₃/Pt/ZnO/Al₂O₃ Film Electrode for SAW Devices by Using Al₂O₃ Barrier Layer.通过使用氧化铝阻挡层提高用于声表面波器件的Al₂O₃/Pt/ZnO/Al₂O₃薄膜电极的高温稳定性
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