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铋纳米带中的拓扑保护光伏效应

Topologically Protected Photovoltaics in Bi Nanoribbons.

作者信息

Uría-Álvarez Alejandro José, Palacios Juan José

机构信息

Departamento de Física de la Materia Condensada, Condensed Matter Physics Center (IFIMAC), and Instituto Nicolás Cabrera (INC), Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid, Spain.

出版信息

Nano Lett. 2024 Jun 5;24(22):6651-6657. doi: 10.1021/acs.nanolett.4c01277. Epub 2024 May 28.

Abstract

Photovoltaic efficiency in solar cells is hindered by many unwanted effects. Radiative channels (emission of photons) sometimes mediated by nonradiative ones (emission of phonons) are principally responsible for the decrease in exciton population before charge separation can take place. One such mechanism is electron-hole recombination at surfaces or defects where the in-gap edge states serve as the nonradiative channels. In topological insulators (TIs), which are rarely explored from an optoelectronics standpoint, we show that their characteristic surface states constitute a nonradiative decay channel that can be exploited to generate a protected photovoltaic current. Focusing on two-dimensional TIs, and specifically for illustration purposes on a Bi(111) monolayer, we obtain the transition rates from the bulk excitons to the edge states. By breaking the appropriate symmetries of the system, one can induce an edge charge accumulation and edge currents under illumination, demonstrating the potential of TI nanoribbons for photovoltaics.

摘要

太阳能电池中的光伏效率受到许多不良效应的阻碍。辐射通道(光子发射)有时由非辐射通道(声子发射)介导,这主要是在电荷分离发生之前激子数量减少的原因。一种这样的机制是在表面或缺陷处的电子 - 空穴复合,其中带隙边缘态充当非辐射通道。在拓扑绝缘体(TI)中,从光电子学角度很少对其进行探索,我们表明其特征表面态构成了一个非辐射衰减通道,可用于产生受保护的光伏电流。聚焦于二维TI,特别是为了说明目的,以Bi(111)单层为例,我们获得了从体激子到边缘态的跃迁速率。通过打破系统的适当对称性,在光照下可以诱导边缘电荷积累和边缘电流,这证明了TI纳米带在光伏领域的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be82/11157647/fdfcfc463c63/nl4c01277_0001.jpg

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