Howarth James, Vaklinova Kristina, Grzeszczyk Magdalena, Baldi Giulio, Hague Lee, Potemski Marek, Novoselov Kostya S, Kozikov Aleksey, Koperski Maciej
School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom.
Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore.
Proc Natl Acad Sci U S A. 2024 Jun 4;121(23):e2401757121. doi: 10.1073/pnas.2401757121. Epub 2024 May 31.
We experimentally demonstrate the creation of defects in monolayer WSe via nanopillar imprinting and helium ion irradiation. Based on the first method, we realize atomically thin vertical tunneling light-emitting diodes based on WSe monolayers hosting quantum emitters at deterministically specified locations. We characterize these emitters by investigating the evolution of their emission spectra in external electric and magnetic fields, as well as by inducing electroluminescence at low temperatures. We identify qualitatively different types of quantum emitters and classify them according to the dominant electron-hole recombination paths, determined by the mechanisms of intervalley mixing occurring in fundamental conduction and/or valence subbands.
我们通过纳米柱压印和氦离子辐照实验证明了在单层WSe中产生缺陷。基于第一种方法，我们实现了基于单层WSe的原子级薄垂直隧穿发光二极管，其中量子发射体位于确定性指定的位置。我们通过研究它们在外部电场和磁场中的发射光谱演变，以及通过在低温下诱导电致发光来表征这些发射体。我们定性地识别出不同类型的量子发射体，并根据主导的电子-空穴复合路径对它们进行分类，这些路径由基本导带和/或价带子带中发生的能谷混合机制决定。
